"As used herein, 'top' means furthest away from the substrate, while 'bottom' means closest to the substrate. Where a first layer is described as 'disposed over' a second layer, the first layer is disposed further away from substrate. There may be other layers between the first and second layer, unless it is specified that the first layer is 'in contact with' the second layer. For example, a cathode may be described as 'disposed over' an anode, even though there are various organic layers in between.
"As used herein, 'solution processible' means capable of being dissolved, dispersed, or transported in and/or deposited from a liquid medium, either in solution or suspension form.
"A ligand may be referred to as 'photoactive' when it is believed that the ligand directly contributes to the photoactive properties of an emissive material. A ligand may be referred to as 'ancillary' when it is believed that the ligand does not contribute to the photoactive properties of an emissive material, although an ancillary ligand may alter the properties of a photoactive ligand.
"As used herein, and as would be generally understood by one skilled in the art, a first 'Highest Occupied Molecular Orbital' (HOMO) or 'Lowest Unoccupied Molecular Orbital' (LUMO) energy level is 'greater than' or 'higher than' a second HOMO or LUMO energy level if the first energy level is closer to the vacuum energy level. Since ionization potentials (IP) are measured as a negative energy relative to a vacuum level, a higher HOMO energy level corresponds to an IP having a smaller absolute value (an IP that is less negative). Similarly, a higher LUMO energy level corresponds to an electron affinity (EA) having a smaller absolute value (an EA that is less negative). On a conventional energy level diagram, with the vacuum level at the top, the LUMO energy level of a material is higher than the HOMO energy level of the same material. A 'higher' HOMO or LUMO energy level appears closer to the top of such a diagram than a 'lower' HOMO or LUMO energy level.
"As used herein, and as would be generally understood by one skilled in the art, a first work function is 'greater than' or 'higher than' a second work function if the first work function has a higher absolute value. Because work functions are generally measured as negative numbers relative to vacuum level, this means that a 'higher' work function is more negative. On a conventional energy level diagram, with the vacuum level at the top, a 'higher' work function is illustrated as further away from the vacuum level in the downward direction. Thus, the definitions of HOMO and LUMO energy levels follow a different convention than work functions.
"As used herein, if one layer is described as being positioned or deposited 'over' another layer, intervening layers may also be present. A first layer is 'over' a second layer generally when the first layer is disposed further from the substrate, i.e., which generally means that the first layer was deposited after the second layer. The word 'under' also allows for intervening layer in a manner similar to 'over.'
"More details on OLEDs, and the definitions described above, can be found in U.S. Pat. No. 7,279,704, which is incorporated herein by reference in its entirety."
In addition to obtaining background information on this patent application, VerticalNews editors also obtained the inventors' summary information for this patent application: "A method for fabricating a device having a barrier layer is provided. The method comprises depositing a barrier layer over a substrate. Depositing the barrier layer comprises depositing, via chemical vapor deposition, a first sublayer of the barrier layer using a first set of deposition parameters. The chemical vapor deposition uses a feed gas mixture comprising a non-deposition gas and a deposition gas. The first set of deposition parameters includes a power density, a deposition pressure, a non-deposition gas flow rate and a deposition gas flow rate. The flow ratio of non-deposition gas to deposition gas multiplied by the power density is greater than 13,000 mW/cm.sup.2. The power density divided by deposition pressure is between 3.28 and 30 W/cm.sup.2/torr. The power density divided by the sum of the non-deposition gas flow rate and the deposition gas flow rate is between 0.5 and 18 mW/cm.sup.2/sccm. The power density divided by the precursor gas flow rate is between 20 and 200 mW/cm.sup.2/sccm. The material of the first barrier layer is selected to have a plasma etch rate less than 5 times the etch rate of thermally growth silicon oxide under the same etching conditions.
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