Study Results from Z. Druckmullerova and Colleagues Broaden Understanding of Microscopy (Toward Site-Specific Dopant Contrast in Scanning Electron Microscopy)
Our news journalists obtained a quote from the research, "Here, we report on optimization of site-specific sample preparation by the focused Ga ion beam (FIB) technique that provides improved dopant contrast in SEM. Similar to FIB lamella preparation for transmission electron microscopy, a polishing sequence with decreasing ion energy is necessary to minimize the thickness of the electronically dead layer. We have achieved contrast values comparable to the cleaved sample, being able to detect dopant concentrations down to 1 x 10(16) cm(-3). A theoretical model shows that the electronically dead layer corresponds to an amorphized Si layer formed during ion beam polishing."
According to the news editors, the research concluded: "Our results also demonstrate that contamination issues are significantly suppressed for FIB-treated samples compared with cleaved ones."
For more information on this research see: Toward Site-Specific Dopant Contrast in Scanning Electron Microscopy. Microscopy and Microanalysis, 2014;20(4):1312-1317. Microscopy and Microanalysis can be contacted at:
Our news journalists report that additional information may be obtained by contacting Z. Druckmullerova,
Keywords for this news article include: Brno,
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