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Study Results from Z. Druckmullerova and Colleagues Broaden Understanding of Microscopy (Toward Site-Specific Dopant Contrast in Scanning Electron...

September 12, 2014



Study Results from Z. Druckmullerova and Colleagues Broaden Understanding of Microscopy (Toward Site-Specific Dopant Contrast in Scanning Electron Microscopy)

By a News Reporter-Staff News Editor at Science Letter -- Fresh data on Microscopy are presented in a new report. According to news reporting out of Brno, Czech Republic, by NewsRx editors, research stated, "Since semiconductor devices are being scaled down to dimensions of several nanometers there is a growing need for techniques capable of quantitative analysis of dopant concentrations at the nanometer scale in all three dimensions. Imaging dopant contrast by scanning electron microscopy (SEM) is a very promising method, but many unresolved issues hinder its routine application for device analysis, especially in cases of buried layers where site-specific sample preparation is challenging."

Our news journalists obtained a quote from the research, "Here, we report on optimization of site-specific sample preparation by the focused Ga ion beam (FIB) technique that provides improved dopant contrast in SEM. Similar to FIB lamella preparation for transmission electron microscopy, a polishing sequence with decreasing ion energy is necessary to minimize the thickness of the electronically dead layer. We have achieved contrast values comparable to the cleaved sample, being able to detect dopant concentrations down to 1 x 10(16) cm(-3). A theoretical model shows that the electronically dead layer corresponds to an amorphized Si layer formed during ion beam polishing."

According to the news editors, the research concluded: "Our results also demonstrate that contamination issues are significantly suppressed for FIB-treated samples compared with cleaved ones."

For more information on this research see: Toward Site-Specific Dopant Contrast in Scanning Electron Microscopy. Microscopy and Microanalysis, 2014;20(4):1312-1317. Microscopy and Microanalysis can be contacted at: Cambridge Univ Press, 32 Avenue Of The Americas, New York, NY 10013-2473, USA. (Cambridge University Press - www.cambridge.org; Microscopy and Microanalysis - journals.cambridge.org/action/displayJournal?jid=MAM)

Our news journalists report that additional information may be obtained by contacting Z. Druckmullerova, FEI Co, Brno 61200, Czech Republic. Additional authors for this research include M. Kolibal, T. Vystavel and T. Sikola (see also Microscopy).

Keywords for this news article include: Brno, Czech Republic, Europe, Microscopy

Our reports deliver fact-based news of research and discoveries from around the world. Copyright 2014, NewsRx LLC


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Source: Science Letter


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