Patent number 8816328 is assigned to
The following quote was obtained by the news editors from the background information supplied by the inventors: "As scaling for conventional CMOS integrated circuits approaches quantum mechanical limits, alternative nanostructures and materials have been investigated in the semiconductor industry. Of such nanostructures and materials, carbon nanotubes (CNTs) offer excellent intrinsic properties that are suitable for high performance nanoscale devices.
"CNTs are allotropes of carbon that exhibit a cylindrical nanostructure and are members of the fullerene structural family. Their name is derived from their long, hollow structure having walls formed by one-atom-thick sheets of carbon, known as graphene.
"CNTs can be used to construct electronic devices such as transistors as evidenced by, for example, commonly assigned US 2011/0127492 A1, 'Field Effect Transistor Having Nanostructure Channel',
In addition to the background information obtained for this patent, VerticalNews journalists also obtained the inventors' summary information for this patent: "In accordance with an aspect thereof the exemplary embodiments of this invention provide a method of forming a field effect transistor. The method comprises providing a substrate having a carbon nanotube disposed over a surface of the substrate; forming a protective electrically insulating layer over the carbon nanotube; and forming a first multi-layer resist stack over the protective electrically insulating layer. The first multi-layer resist stack comprises a bottom layer, an intermediate layer and a top layer of resist. The method further comprises patterning and selectively removing a portion of the first multi-layer resist stack to define an opening for a gate stack, where selectively removing also completely removes the intermediate layer and the top layer of resist leaving the bottom layer. The method further comprises selectively removing a portion of the protective electrically insulating layer within the opening to expose a first portion of the carbon nanotube; forming the gate stack within the opening and upon the exposed first portion of the carbon nanotube; forming a second multi-layered resist stack upon the bottom layer and upon the gate stack; patterning and selectively removing a portion of the second multi-layer resist stack to define an opening for a source contact and an opening for a drain contact; selectively removing a portion of the protective electrically insulating layer within the source contact opening and within the drain contact opening to expose a second portion of the carbon nanotube and a third portion of the carbon nanotube; and applying contact material within the source contact opening and within the drain contact opening and upon the exposed second and third portions of the carbon nanotube."
URL and more information on this patent, see: Chang, Josephine B; Glodde, Martin; Guillorn, Michael A.. Patterning Contacts in Carbon Nanotube Devices. U.S. Patent Number 8816328, filed
Keywords for this news article include: Carbon Nanotubes, Emerging Technologies, Fullerenes,
Our reports deliver fact-based news of research and discoveries from around the world. Copyright 2014, NewsRx LLC
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OCTOBER 30, 2014
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