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Researchers Submit Patent Application, "Circuit for Generating Reference Voltage", for Approval

September 10, 2014



By a News Reporter-Staff News Editor at Electronics Newsweekly -- From Washington, D.C., VerticalNews journalists report that a patent application by the inventors CHOI, MICHAEL (Seoul, KR); MUTHUVEERAN, MARUTHA MUTHU (Suwon-si, KR), filed on January 21, 2014, was made available online on August 28, 2014.

The patent's assignee is Samsung Electronics Co., Ltd.

News editors obtained the following quote from the background information supplied by the inventors: "Exemplary embodiments of the present invention relate to a circuit for generating a reference voltage.

"With the gradual high integration of an electronic circuit system, various circuits have been integrated into one chip. Among them, an analog circuit requires various DC biases due to the characteristics thereof. Although such DC biases may be separately supplied from outside of the chip, typically a DC bias generating circuit is provided inside the chip to supply the DC biases."

As a supplement to the background information on this patent application, VerticalNews correspondents also obtained the inventors' summary information for this patent application: "At least one embodiment of the inventive concept may be used to generate a direct current (DC) bias. As an example, a band gap reference voltage generator can supply a relatively stable bias even if a power supply voltage or a temperature is changed.

"When the power is supplied to a semiconductor chip or a system, in an exemplary embodiment, a bias generating circuit, such as the band gap reference voltage generator (e.g., la bias generating circuit using transistors), needs to rapidly get into a steady state to perform an operation that is desired by a circuit designer, so it can be ready to supply a bias to an analog circuit or another circuit.

"However, when the power supply is initially applied (e.g., starts), the bias circuit may not be promptly ready to supply the bias, or the operation of the bias circuit itself may not be successful. In an exemplary embodiment of the inventive concept, a start-up circuit is used to make the bias generating circuit enter into a steady state safely and promptly when the power supply to the bias generating circuit starts.

"In an exemplary embodiment, the start-up circuit helps the band gap reference voltage generator to perform an initial operation only, and once the circuit reaches the steady state, the start-up circuit is separated from the bias circuit, so that the start-up circuit does not exert an influence on the circuit. Further, in the embodiment, the start-up circuit drives the band gap reference voltage generator until the time when the band gap reference voltage generator generates a desired bias voltage.

"According to an exemplary embodiment of the present inventive concept, there is provided a circuit for generating a reference voltage including: a band gap circuit generating a first current having a size that increases in proportion to an absolute temperature and a second current having a size that decreases in proportion to the absolute temperature, and outputting a reference voltage based on the first current and the second current; a mirroring circuit mirroring a sum of the first current and the second current and outputting a mirroring voltage that is in proportion to the sum of the first current and the second current; and a start-up circuit receiving the mirroring voltage from the mirroring circuit and providing a driving current for generating the first current or the second current to the band gap circuit until a time when the first current starts to be generated in the band gap circuit.

"According to an exemplary embodiment of the present inventive concept, there is provided a circuit for generating a reference voltage including: a band gap circuit outputting a reference voltage that is in proportion to a size of a driving current that flows through the band gap circuit when the size of the driving current is in a first range, and outputting a constant reference voltage when the size of the driving current is in a second range that is different from the first range; and a start-up circuit providing the driving current to the band gap circuit until the driving current in the second range flows through the band gap circuit.

"According to an exemplary embodiment of the present inventive concept, there is provided a circuit for generating a DC bias including: a bias generating circuit, a current mirror circuit, and a start-up circuit. The bias generating circuit is configured to generate internal first and second currents that are proportional to a temperature, and output the DC bias based on the currents. The current mirror circuit is configured to output a mirroring voltage that is in proportion to a sum of the first current and the second current. The start-up circuit is configured to receive the mirroring voltage and apply a driving current to the bias generating circuit only until the first current reaches a predetermined level.

BRIEF DESCRIPTION OF THE DRAWINGS

"The present inventive concept will be more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which:

"FIG. 1 is a circuit diagram of a circuit for generating a reference voltage according to an exemplary embodiment of the present inventive concept;

"FIG. 2 is a diagram illustrating an exemplary output of a band gap circuit of FIG. 1;

"FIG. 3 is a circuit diagram of a comparator of FIG. 1 according to an exemplary embodiment of the inventive concept;

"FIGS. 4 to 6 are diagrams explaining the operation of a circuit for generating a reference voltage according to an exemplary embodiment of the present inventive concept;

"FIG. 7 is a circuit diagram of a circuit for generating a reference voltage according to an exemplary embodiment of the present inventive concept;

"FIG. 8 is a block diagram of a memory device adopting a circuit for generating a reference voltage according to an exemplary embodiment of the present inventive concept;

"FIG. 9 is a block diagram explaining a memory system adopting a circuit for generating a reference voltage according to an exemplary embodiment of the present inventive concept;

"FIG. 10 is a block diagram illustrating an application example of the memory system of FIG. 9; and

"FIG. 11 is a block diagram illustrating a computing system including the memory system explained with reference to FIG. 10."

For additional information on this patent application, see: CHOI, MICHAEL; MUTHUVEERAN, MARUTHA MUTHU. Circuit for Generating Reference Voltage. Filed January 21, 2014 and posted August 28, 2014. Patent URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&u=%2Fnetahtml%2FPTO%2Fsearch-adv.html&r=5242&p=105&f=G&l=50&d=PG01&S1=20140821.PD.&OS=PD/20140821&RS=PD/20140821

Keywords for this news article include: Electronics, Samsung Electronics Co., Samsung Electronics Co. Ltd.

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Source: Electronics Newsweekly


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