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Reports from Anyang Institute of Technology Advance Knowledge in Materials Science (Synthesis of Sb2S3 nanowall arrays for high performance visible...

September 9, 2014



Reports from Anyang Institute of Technology Advance Knowledge in Materials Science (Synthesis of Sb2S3 nanowall arrays for high performance visible light photodetectors)

By a News Reporter-Staff News Editor at Journal of Technology -- Data detailed on Materials Science have been presented. According to news reporting from Anyang, People's Republic of China, by VerticalNews journalists, research stated, "By using a facile polyol and template-free refluxing process, we report the successful synthesis of Sb2S3 nanowall arrays (NWAs) on the surface of FTO substrate."

The news correspondents obtained a quote from the research from the Anyang Institute of Technology, "The as-synthesized samples were characterized by SEM, TEM, XRD and UV vis DRS. The NWAs-based photodetector exhibits linear photocurrent characteristics, high stability, excellent reproducible properties, low LDR (linear dynamic range) value of 8.6 dB, fast response time of 0.52 s and recovery time of 1.11 s. The flexible photodetector was also fabricated by simply transferring the NWAs to a transparent PET substrate; it revealed good flexibility and stability."

According to the news reporters, the research concluded: "Our results imply that Sb2S3 NWAs are prospective candidates for high-performance nanoscale optoelectronic devices."

For more information on this research see: Synthesis of Sb2S3 nanowall arrays for high performance visible light photodetectors. Materials Research Bulletin, 2014;57():300-305. Materials Research Bulletin can be contacted at: Pergamon-Elsevier Science Ltd, The Boulevard, Langford Lane, Kidlington, Oxford OX5 1GB, England. (Elsevier - www.elsevier.com; Materials Research Bulletin - www.elsevier.com/wps/product/cws_home/313)

Our news journalists report that additional information may be obtained by contacting J.F. Chao, Anyang Inst Technol, Coll Math & Phys, Anyang 455000, People's Republic of China. Additional authors for this research include S.M. Xing, J.J. Zhang, C.H. Qin, D.G. Duan, X.H. Wu and Q.C. Shen.

Keywords for this news article include: Anyang, People's Republic of China, Asia, Materials Science

Our reports deliver fact-based news of research and discoveries from around the world. Copyright 2014, NewsRx LLC


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Source: Journal of Technology


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