This patent application is assigned to
The following quote was obtained by the news editors from the background information supplied by the inventors: "The present disclosure relates to a light-emitting diode, and more particularly, to a light-emitting diode having a plurality of recess structures on the side walls.
"Generally, when a light-emitting diode (LED) operates and emits light, the light travels into a transparent substrate from a light-emitting layer, and then transmits out from sidewalls of the transparent substrate. Therefore, the transmittance of the transparent substrate directly affects the light-emitting efficiency of light-emitting diode. Conventionally, a sidewall etching (SWE) process or a stealth dicing (SD) process is used to isolate LED dies, but it is known that the processes are harmful to the transmittance of a light-emitting diode.
"For example, when the SWE process is used to isolate the LED dies, several sintering marks may be formed on the transparent substrate. The sintering marks can absorb light energy and reduce the transmittance. On the other hand, when the SD process is used to isolate the LED dies, the sidewall of the LED dies are so smooth that the light entering into the transparent substrate may face total internal reflection, which reduces the transmittance.
"Therefore, an improved LED die and a method of manufacturing the same are needed to solve the aforementioned problems."
In addition to the background information obtained for this patent application, VerticalNews journalists also obtained the inventors' summary information for this patent application: "The present disclosure provides a light-emitting diode (LED) die and a method for manufacturing thereof, so as to solve the problems of the prior art and enhance the transparent efficiency of the LED die.
"One aspect of the present disclosure is to provide an LED die. The LED die comprises a transparent substrate, an N-type semiconductor layer positioned on the transparent substrate, a light-emitting layer positioned on the N-type semiconductor layer, and a P-type semiconductor layer positioned on the light-emitting layer. In which, the N-type semiconductor layer, the transparent substrate or both have side walls with a plurality of recess structure.
"Another aspect of the present disclosure is to provide a method for manufacturing the LED die. The method for manufacturing the LED die comprises the following steps. A transparent substrate is provided, which has an upper surface. A LED stacked structure is formed on the transparent substrate. A plurality of recess structures are formed on sidewalls of the N-type semiconductor layer, the transparent substrate or both. In which, the LED stacked structure comprises an N-type semiconductor layer positioned on the transparent substrate, a light-emitting layer positioned on the N-type semiconductor layer, and a P-type semiconductor layer positioned on the light-emitting layer.
BRIEF DESCRIPTION OF THE DRAWINGS
"For a more complete understanding of the present invention, and the advantages thereof, reference is now made to the following descriptions taken in conjunction with the accompanying drawings, in which:
"FIG. 1A is a top view of a light-emitting diode (LED) die according to one embodiment of the present disclosure;
"FIG. 1B and 1C are cross-sectional views of the LED die taken along A-A' line in FIG. 1A;
"FIG. 1D to 1F are cross-sectional views of the LED die taken along B-B' line in FIG. 1A;
"FIG. 2A is a top view of an LED die according to one embodiment of the present disclosure;
"FIG. 2B is a cross-sectional view of the LED die taken along C-C' line in FIG. 2A;
"FIG. 2C and 2D are cross-sectional views of the LED die taken along D-D' line in FIG. 2A; and
"FIG. 3A to 3F are side views of LED die structures according to embodiments of the present disclosure."
URL and more information on this patent application, see: TSAI, PEI-SHIU; HUANG, Wan-Chun. Led Chip and Method for Manufacturing the Same. Filed
Keywords for this news article include: Electronics,
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