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New Findings Reported from D.P. Datta and Co-Authors Describe Advances in Applied Surface Science (Evolution of porous network in GaSb under normally...

August 15, 2014



New Findings Reported from D.P. Datta and Co-Authors Describe Advances in Applied Surface Science (Evolution of porous network in GaSb under normally incident 60 keV Ar+-ion irradiation)

By a News Reporter-Staff News Editor at Science Letter -- A new study on Science is now available. According to news reporting from New Delhi, India, by NewsRx journalists, research stated, "GaSb(1 0 0) samples were irradiated with 60 key Ar+-ions at normal incidence for fluences in the range of 7 x 10(16) to 3 x 10(18) ions cm(-2) at room temperature, showing gradual evolution of a porous surface layer containing interconnected nanofibers. In particular, fluence dependent formation of patches on the nanoporous layer is observed by scanning electron microscopy."

The news correspondents obtained a quote from the research, "Combined results of grazing incidence x-ray diffraction and transmission electron microscopy reveal the presence of nanocrystallites in the porous structures. Compositional analysis by x-ray photoelectron spectroscopy indicates the development of oxide phases, mainly Ga2O3 and Sb2O3 where the former increases with fluence."

According to the news reporters, the research concluded: "We have proposed a model addressing a competition between ion-induced-defect driven growth of the nanoporous layer and redeposition of sputtered target atoms on the growing layer."

For more information on this research see: Evolution of porous network in GaSb under normally incident 60 keV Ar+-ion irradiation. Applied Surface Science, 2014;310():189-195. Applied Surface Science can be contacted at: Elsevier Science Bv, PO Box 211, 1000 Ae Amsterdam, Netherlands. (Elsevier - www.elsevier.com; Applied Surface Science - www.elsevier.com/wps/product/cws_home/505669)

Our news journalists report that additional information may be obtained by contacting D.P. Datta, Interuniv Accelerator Center, New Delhi 110067, India. Additional authors for this research include A. Kanjilal, S.K. Garg, P.K. Sahoo, B. Satpati, D. Kanjilal and T. Som (see also Science).

Keywords for this news article include: Asia, India, Science, New Delhi

Our reports deliver fact-based news of research and discoveries from around the world. Copyright 2014, NewsRx LLC


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Source: Science Letter


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