Investigators from National Center for Scientific Research (CNRS) Report New Data on Silicon (Incorporation and redistribution of impurities into silicon nanowires during metal-particle-assisted growth)
By a News Reporter-Staff News Editor at Science Letter -- New research on Silicon is the subject of a report. According to news reporting from Marcoussis, France, by NewsRx journalists, research stated, "The incorporation of metal atoms into silicon nanowires during metal-particle-assisted growth is a critical issue for various nanowire-based applications. Here we have been able to access directly the incorporation and redistribution of metal atoms into silicon nanowires produced by two different processes at growth rates ranging from 3 to 40 nm s(-1), by using laser-assisted atom probe tomography and scanning transmission electron microscopy."
The news correspondents obtained a quote from the research from National Center for Scientific Research (CNRS), "We find that the concentration of metal impurities in crystalline silicon nanowires increases with the growth rate and can reach a level of two orders of magnitude higher than that in their equilibrium solubility. Moreover, we demonstrate that the impurities are first incorporated into nanowire volume and then segregate at defects such as the twin planes."
According to the news reporters, the research concluded: "A dimer-atom-insertion kinetic model is proposed to account for the impurity incorporation into nanowires."
For more information on this research see: Incorporation and redistribution of impurities into silicon nanowires during metal-particle-assisted growth. Nature Communications, 2014;5():83-89. Nature Communications can be contacted at: Nature Publishing Group, Macmillan Building, 4 Crinan St, London N1 9XW, England. (Nature Publishing Group - www.nature.com/; Nature Communications - www.nature.com/ncomms/)
Our news journalists report that additional information may be obtained by contacting W.H. Chen, CNRS, LPN, F-91406 Marcoussis, France. Additional authors for this research include L.W. Yu, S. Misra, Z. Fan, P. Pareige, G. Patriarche, S. Bouchoule and P.R.I. Cabarrocas (see also Silicon).
Keywords for this news article include: France, Europe, Silicon, Nanowire, Marcoussis, Nanotechnology, Emerging Technologies
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