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Patent Issued for Thin-Film Transistor Array Substrate, Organic Light-Emitting Display Having the Same, and Method of Manufacturing the Organic...

September 3, 2014



Patent Issued for Thin-Film Transistor Array Substrate, Organic Light-Emitting Display Having the Same, and Method of Manufacturing the Organic Light-Emitting Display

By a News Reporter-Staff News Editor at Electronics Newsweekly -- According to news reporting originating from Alexandria, Virginia, by VerticalNews journalists, a patent by the inventors Kim, Dae-Woo (Yongin, KR); Park, Jong-Hyun (Yongin, KR); Lee, Yul-Kyu (Yongin, KR), filed on December 6, 2011, was published online on August 19, 2014.

The assignee for this patent, patent number 8809863, is Samsung Display Co., Ltd. (Gyeonggi-do, KR).

Reporters obtained the following quote from the background information supplied by the inventors: "The described technology generally relates to a thin-film transistor array substrate, an organic light-emitting display having the same, and a method of manufacturing the organic light-emitting display.

"A flat panel display, such as an organic light emitting display and a liquid crystal display is formed on a substrate. A pattern is generally formed on the substrate and includes a fine wiring structure that connects a thin-film transistor TFT and a capacitor.

"Generally, such a pattern is transferred onto the substrate by using a mask having a fine pattern."

In addition to obtaining background information on this patent, VerticalNews editors also obtained the inventors' summary information for this patent: "One inventive aspect is an organic light-emitting display that is manufactured by a simple process and has a high aperture ratio and high optical extraction efficiency, and a method of manufacturing the organic light-emitting display device.

"Another aspect is a thin-film transistor array substrate including: a buffer layer formed on a substrate; a first insulating layer formed on the buffer layer; a pixel electrode formed on the first insulating layer using a transparent conductive material; an intermediate layer that covers an upper side and outer side-surfaces of the pixel electrode and includes a organic light-emitting layer; a gap formed by etching the first insulating layer and the buffer layer at a peripheral of the pixel electrode; and a facing electrode that is formed on an upper side and outer side-surfaces of the pixel electrode to cover the intermediate layer and the gap.

"The facing electrode may be a reflection electrode that reflects light generated from the organic light-emitting layer.

"The thin-film transistor array substrate may further include: a second insulating layer that has an opening that exposes the entire pixel electrode and is formed on the first insulating layer; and a third insulating layer that has an opening greater than the opening in the second insulating layer and is formed on the second insulating layer.

"The third insulating layer may cover a portion of the pixel electrode that is connected to one of source and drain electrodes.

"The buffer layer, the first insulating layer, and the second insulating layer may form the same etch surface, and the gap may be formed between the etch surface and the outer side-surfaces of the pixel electrode.

"Another aspect is an organic light-emitting display including: a buffer layer formed on a substrate; a thin-film transistor that includes an active layer, a gate electrode, a source electrode, and a drain electrode formed on the buffer layer; an organic light-emitting device that includes a pixel electrode disposed on the same layer as the gate electrode, an intermediate layer that includes a light-emitting layer and covers on an upper side and outer side-surfaces of the pixel electrode, and a facing electrode that covers the intermediate layer and a first gap formed at peripherals of the pixel electrode and is formed on the upper side and the outer side-surfaces of the pixel electrode; a first insulating layer that is formed on the buffer layer and is disposed between the active layer and the gate electrode and on a lower side of the pixel electrode; a second insulating layer that is disposed between the first insulating layer and the source and drain electrodes and includes an opening that exposes the pixel electrode; and a third insulating layer that is formed on the second insulating layer and includes an opening greater than the opening in the second insulating layer to expose the pixel electrode.

"The first gap may be formed at peripherals of the pixel electrode by etching the first insulating layer and the buffer layer when the opening in the second insulating layer is formed.

"The buffer layer, the first insulating layer, and the second insulating layer may form the same etch surface, and the first gap may be formed between the etch surface and the outer side-surfaces of the pixel electrode.

"The third insulating layer may cover a portion of the pixel electrode that is connected to one of the source and drain electrodes.

"The facing electrode may be a reflection electrode that reflects light generated from the light-emitting display layer, and the facing may have a diaphragm shape or a concaved mirror shape.

"The organic light-emitting display device may further include a capacitor that includes a lower electrode disposed as the same layer of the active layer and an upper electrode disposed as the same layer of the gate electrode.

"The second insulating layer may include another opening through which the upper electrode is exposed, and a second gap may be formed between the opening and the outer side-surfaces of the upper electrode.

"Another aspect is a method of manufacturing an organic light-emitting display, the method including: performing a first mask process for forming a buffer layer and a semiconductor layer on a substrate, and an active layer of a thin-film transistor and a lower electrode of a capacitor by patterning the semiconductor layer; performing a second mask process for forming a first insulating layer covering the active layer and the lower electrode on the substrate, sequentially stacking a transparent conductive material and a first metal on the first insulating layer, and forming a gate electrode, a first electrode pattern for forming a pixel electrode and a second electrode pattern for forming an upper electrode of the capacitor by patterning the transparent conductive material and the first metal; performing a third mask process for forming a second insulating layer on the substrate on which the gate electrode, the first electrode pattern, and the second electrode pattern, and forming a first gap at peripherals of the first electrode pattern while forming an opening that exposes source and drain regions of the active layer, the first electrode pattern, and the second electrode pattern by patterning the second insulating layer; performing a fourth mask process for forming a second metal on the substrate on which the second insulating layer is formed, source and drain electrodes that connect the source and drain regions by patterning the second metal, and removing the first metal on the pixel electrode and the upper electrode; and performing a fifth mask process for forming a third insulating layer on the resultant structure of the fourth mask process, and exposing the pixel electrode by forming an opening greater than the opening formed in the second insulating layer by patterning the third insulating layer.

"The method may further include doping the source and drain regions of the active layer after performing the second mask process.

"The performing of the third mask process may include forming the same etch surface by simultaneously etching the buffer layer, the first insulating layer, and the second insulating layer while forming the opening that exposes the first electrode pattern by patterning the second insulating layer, and forming the first gap between the etch surface and outer side-surfaces of the first electrode pattern.

"The performing of the third mask process may include forming the same etch surface by simultaneously etching the first insulating layer and the second insulating layer while forming the opening that exposes the second electrode pattern by patterning the second insulating layer, and forming a second gap between the etch surface and outer side-surfaces of the second electrode pattern.

"The fourth mask process may include a first etching process for etching the second metal and a second etching process for removing the first metal on the pixel electrode and the upper electrode.

"The performing of the fourth mask process may include forming the second metal using the same metal used to form the first metal, and simultaneously etching the first and second metals.

"The method may further include doping the lower electrode of the capacitor after performing the fourth mask process.

"The performing of the fifth mask process may include covering a portion of the pixel electrode that is connected to one of the source and drain electrodes with the third insulating layer.

"The method may further include forming an intermediate layer having a light-emitting layer to cover an upper side and outer side-surfaces of the pixel electrode; and forming a facing electrode on the upper side and the outer side-surfaces of the pixel electrode to cover the intermediate layer and the first gap formed at the peripherals of the pixel electrode after performing the fifth mask process.

"The facing electrode may be a reflection electrode that reflects light generated from the light-emitting layer, and may have a diaphragm shape or a concaved mirror shape."

For more information, see this patent: Kim, Dae-Woo; Park, Jong-Hyun; Lee, Yul-Kyu. Thin-Film Transistor Array Substrate, Organic Light-Emitting Display Having the Same, and Method of Manufacturing the Organic Light-Emitting Display. U.S. Patent Number 8809863, filed December 6, 2011, and published online on August 19, 2014. Patent URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8809863.PN.&OS=PN/8809863RS=PN/8809863

Keywords for this news article include: Electronics, Semiconductor, Samsung Display Co. Ltd..

Our reports deliver fact-based news of research and discoveries from around the world. Copyright 2014, NewsRx LLC


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Source: Electronics Newsweekly


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