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Patent Issued for Thermally Assisted MRAM with Multilayer Strap and Top Contact for Low Thermal Conductivity

September 3, 2014



By a News Reporter-Staff News Editor at Electronics Newsweekly -- A patent by the inventor Annunziata, Anthony J. (Stamford, CT), filed on March 13, 2013, was published online on August 19, 2014, according to news reporting originating from Alexandria, Virginia, by VerticalNews correspondents.

Patent number 8809827 is assigned to International Business Machines Corporation (Armonk, NY).

The following quote was obtained by the news editors from the background information supplied by the inventors: "The present invention relates generally to magnetic memory devices, and more specifically, to thermally assisted MRAM devices that provide low thermal conductivity.

"Magnetoresistive random access memory (MRAM) is a non-volatile computer memory (NVRAM) technology. Unlike conventional RAM chip technologies, MRAM data is not stored as electric charge or current flows, but by magnetic storage elements. The elements are formed from two ferromagnetic plates, each of which can hold a magnetic field, separated by a thin insulating layer. One of the two plates is a reference magnet set to a particular polarity; the other plate's field can be changed to match that of an external field to store memory and is termed the 'free magnet' or 'free-layer'. This configuration is known as a magnetic tunnel junction and is the simplest structure for a MRAM bit. A memory device is built from a grid of such 'cells.' In some configurations of MRAM, such as the type further discussed herein, both the reference and free layers of the magnetic tunnel junctions can be switched using an external magnetic field."

In addition to the background information obtained for this patent, VerticalNews journalists also obtained the inventor's summary information for this patent: "According to one embodiment, a thermally assisted magnetoresistive random access memory device (TAS-MRAM) is provided. The device includes a magnetic tunnel junction configured to store data, a first multilayer contact structure positioned on one end of the magnetic tunnel junction, and a second multilayer contact structure positioned on an opposite end of the magnetic tunnel junction. The first multilayer contact structure and the second multilayer contact structure each include multiple layers of metals. The multiple layers of metals are structured to inhibit thermal conductivity between the magnetic tunnel junction and surrounding structures, and the multiple layers of metals are structured to electrically conduct electrical current.

"According to one embodiment, a thermally assisted magnetoresistive random access memory device (TAS-MRAM) is provided. The device includes a first magnetic tunnel junction configured to store data, a second magnetic tunnel junction configured to store data, and a first multilayer contact structure positioned on one end of the first magnetic tunnel junction. The device includes a second multilayer contact structure positioned on the first magnetic tunnel junction opposite the first multilayer contact structure, and a third multilayer contact structure positioned on one end of the second magnetic tunnel junction. The second multilayer contact structure is positioned on the second magnetic tunnel junction opposite the third multilayer contact structure. The first multilayer contact structure includes first multiple layers of metals, the second multilayer contact structure includes second multiple layers of metals, and the third multilayer contact structure include third multiple layers of metals. The first, second, and third multiple layers of metals are each structured to inhibit thermal conductivity and electrically conduct electrical current.

"According to one embodiment, a thermally assisted magnetoresistive random access memory device (TAS-MRAM) is provided. The device includes a first magnetic tunnel junction configured to store data, a second magnetic tunnel junction configured to store data, a first multilayer contact structure positioned on one end of the first magnetic tunnel junction, a non-multilayer contact structure positioned on the first magnetic tunnel junction opposite the first multilayer contact structure, and a second multilayer contact structure positioned on one end of the second magnetic tunnel junction. The non-multilayer contact structure is positioned on the second magnetic tunnel junction opposite the second multilayer contact structure. The first multilayer contact structure includes first multiple layers of metals and the second multilayer contact structure includes second multiple layers of metals. The first multiple layers of metals and the second multiple layers of metals are each structured to inhibit thermal conductivity and electrically conduct electrical current.

"Additional features and advantages are realized through the techniques of the present invention. Other embodiments and aspects of the invention are described in detail herein and are considered a part of the claimed invention. For a better understanding of the invention with the advantages and the features, refer to the description and to the drawings."

URL and more information on this patent, see: Annunziata, Anthony J.. Thermally Assisted MRAM with Multilayer Strap and Top Contact for Low Thermal Conductivity. U.S. Patent Number 8809827, filed March 13, 2013, and published online on August 19, 2014. Patent URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8809827.PN.&OS=PN/8809827RS=PN/8809827

Keywords for this news article include: Electronics, Random Access Memory, International Business Machines Corporation.

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Source: Electronics Newsweekly


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