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Patent Issued for Semicondcutor Device and Method for Fabricating the Same

September 3, 2014



By a News Reporter-Staff News Editor at Electronics Newsweekly -- From Alexandria, Virginia, VerticalNews journalists report that a patent by the inventor Park, Ji Ho (Changwon-si, KR), filed on December 20, 2011, was published online on August 19, 2014.

The patent's assignee for patent number 8809977 is SK Hynix Inc. (Gyeonggi-do, KR).

News editors obtained the following quote from the background information supplied by the inventors: "The present invention relates to a semiconductor device and a method for fabricating the semiconductor device, and more particularly to a semiconductor apparatus including a magneto-resistance device in which a pinned layer having a polarity formed in a vertical magnetic direction is included.

"A memory device for storing data may be used in a computer, a mobile device, a broadcast system, instructional devices, game devices, and so on.

"Since memory devices were first introduced, a storage capability of memory device has been increasing quadruple every 2 to 3 years.

"Recently, a non-volatile semiconductor memory device has been developed to allow easier access (e.g., operation speed). For example, a spin-transfer torque random access memory (STT-RAM) has been developed. The STT-RAM, which is a type of magneto-resistance random memory device (MRAM), uses an element having a magneto-resistance that depends on quantum mechanics effect for storing data, where the STT-RAM has non-volatility and high operation speed.

"In order to store information, the STT-RAM uses a Magnetic Tunnel Junction (MTJ). The MTJ generally includes a stacked structure of a lower electrode, a pinned layer, an insulating layer, a free layer, and an upper electrode. Depending on magnetic directions of the pinned layer and the free layer, a magneto-resistance (MR) of the MTJ is changed. The STT-RAM detects changes of the magneto-resistance to recognize whether a stored data is a logic level of 1 or 0.

"The MTJ can be divided into a horizontal type and a vertical type according to its magnetic direction. Because the vertical type of MTJ has a vertical magnetic direction, a plan area of the MTJ can be smaller than that of the horizontal type. If the vertical type of MTJ is applied to a STT-RAM, scalability of the memory device can be improved."

As a supplement to the background information on this patent, VerticalNews correspondents also obtained the inventor's summary information for this patent: "An embodiment of the present invention is directed to a semiconductor device including a magneto-resistive storage element which forms a vertical magnetic direction and minimizes/reduces effect of stray field to allow a symmetric switching and a method for fabricating the semiconductor device.

"In accordance with an embodiment of the present invention, a semiconductor device includes a pinned layer having a magnetic direction permanently set to a first direction, a tunnel insulating layer arranged on the pinned layer, a free layer arranged on the tunnel insulating layer and having a changeable magnetic direction, and a magnetic induction layer formed to surround the pinned layer and have a magnetic direction permanently set to a second direction different from the first direction.

"In accordance with another embodiment of the present invention, a semiconductor device includes a pinned layer having a magnetic direction permanently set to a first direction, a tunnel insulating layer arranged on the pinned layer, a free layer arranged on the tunnel insulating layer, and the magnetic induction layer formed to surround the pinned layer with a space and have a magnetic direction set to a second direction opposite from the first direction.

"In accordance with another embodiment of the present invention, a method for fabricating a semiconductor device includes forming a pinned layer, a tunnel insulating layer, a free layer, a first conducting layer, and a mask pattern, etching the first conducting layer by using the make pattern as an etch barrier, etching the free layer, the tunnel insulating layer and the pinned layer by using the etched first conducting layer as an etch barrier, forming a spacer pattern at sides of the etched first conducting layer, free layer, tunnel insulting layer and pinned layer, and forming a magnetic induction layer to surround the spacer pattern connected to the pinned layer."

For additional information on this patent, see: Park, Ji Ho. Semicondcutor Device and Method for Fabricating the Same. U.S. Patent Number 8809977, filed December 20, 2011, and published online on August 19, 2014. Patent URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8809977.PN.&OS=PN/8809977RS=PN/8809977

Keywords for this news article include: Electronics, SK Hynix Inc., Semiconductor.

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Source: Electronics Newsweekly


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