News Column

"Biological and Chemical Sensors" in Patent Application Approval Process

September 3, 2014



By a News Reporter-Staff News Editor at Electronics Newsweekly -- A patent application by the inventors Ellis-Monaghan, John J. (Grand Isle, VT); Gambino, Jeffrey P. (Westford, VT); Liu, Derrick (Winooski, VT), filed on February 14, 2013, was made available online on August 21, 2014, according to news reporting originating from Washington, D.C., by VerticalNews correspondents.

This patent application is assigned to International Business Machines Corporation.

The following quote was obtained by the news editors from the background information supplied by the inventors: "The invention generally relates to semiconductor manufacturing and, more particularly, to device structures, fabrication methods, and design structures for a biological or chemical sensor.

"Biological and chemical sensors based on ion-sensitive field effect transistors (ISFET) can be integrated with modern microelectronic devices and used to detect and measure various aspects of chemical reactions and substance properties. For example, an ion-sensitive field effect transistor (ISFET) may be used to measure ion concentrations, such as hydrogen ion concentration, in a sample of an analyte. An ISFET is similar to a metal oxide semiconductor field effect transistor (MOSFET), but lacks a gate electrode. Instead, an ion-sensitive membrane is placed over the channel region of the ISFET and is exposed to the analyte sample. A reference electrode of the ISFET is separated from the ion-sensitive membrane by the solution. The potential difference between the channel and the reference electrode is a function of the ion concentration in the analyte sample. An operating characteristic of the ISFET may be measured and used to calculate ion concentration.

"Improved device structures, fabrication methods, and design structures for a biological and chemical sensor are needed."

In addition to the background information obtained for this patent application, VerticalNews journalists also obtained the inventors' summary information for this patent application: "In an embodiment of the invention, a method is provided for forming a sensor to detect a property of a substance. The method includes forming a drain and a source of a field effect transistor at a frontside of a substrate, and forming a sensing layer at a backside of the substrate opposite from the frontside of the substrate. The sensing layer is configured to receive the substance.

"In an embodiment of the invention, a device structure is provided for a sensor used to detect a property of a substance. The device structure is formed using a substrate having a frontside and a backside opposite from the frontside. The device structure includes a field effect transistor with a drain and a source at the frontside of the substrate, and a sensing layer at the backside of the substrate. The sensing layer is configured to receive the substance.

"In an embodiment of the invention, a hardware description language (HDL) design structure is encoded on a machine-readable data storage medium. The HDL design structure comprises elements that, when processed in a computer-aided design system, generates a machine-executable representation of a device structure for a provided for a sensor used to detect a property of a substance. The HDL design structure includes a field effect transistor with a drain and a source at a frontside of a substrate, and a sensing layer at a backside of the substrate opposite from the frontside of the substrate. The sensing layer is configured to receive the substance. The HDL design structure may comprise a netlist. The HDL design structure may also reside on storage medium as a data format used for the exchange of layout data of integrated circuits. The HDL design structure may reside in a programmable gate array.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

"The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate various embodiments of the invention and, together with a general description of the invention given above and the detailed description of the embodiments given below, serve to explain the embodiments of the invention. In the drawings, like reference numerals refer to like features.

"FIGS. 1-6 are cross-sectional views of biological and chemical ion sensors in accordance with embodiments of the invention.

"FIG. 7 is a flow diagram of a design process used in semiconductor design, manufacture, and/or test."

URL and more information on this patent application, see: Ellis-Monaghan, John J.; Gambino, Jeffrey P.; Liu, Derrick. Biological and Chemical Sensors. Filed February 14, 2013 and posted August 21, 2014. Patent URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&u=%2Fnetahtml%2FPTO%2Fsearch-adv.html&r=4948&p=99&f=G&l=50&d=PG01&S1=20140814.PD.&OS=PD/20140814&RS=PD/20140814

Keywords for this news article include: Electronics, Semiconductor, International Business Machines Corporation.

Our reports deliver fact-based news of research and discoveries from around the world. Copyright 2014, NewsRx LLC


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Source: Electronics Newsweekly


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