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Researchers Submit Patent Application, "Light-Emitting Diode and the Manufacture Method of the Same", for Approval

August 27, 2014



By a News Reporter-Staff News Editor at Electronics Newsweekly -- From Washington, D.C., VerticalNews journalists report that a patent application by the inventors LIN, Yu-Yao (Hsinchu, TW); KO, Tsun-Kai (Hsinchu, TW); TSENG, Chien-Yuan (Hsinchu, TW); CHEN, Yen-Chih (Hsinchu, TW); YU, Chun-Ta (Hsinchu, TW); LING, Shih-Chun (Hsinchu, TW); YEN, Cheng-Hsiung (Hsinchu, TW); WU, Hsin-Hsien (Hsinchu, TW), filed on January 23, 2014, was made available online on August 14, 2014.

The patent's assignee is Epistar Corporation.

News editors obtained the following quote from the background information supplied by the inventors: "The present disclosure relates to a light-emitting diode and the manufacture method of the same, and in particular to improve opto-electrical characteristics of a light-emitting diode.

"The light-emitting diodes (LEDs) of the solid-state lighting elements have the characteristics of the low power consumption, low heat generation, long operational life, shockproof, small volume, quick response and good opto-electrical property like light emission with a stable wavelength, so the LEDs have been widely used in various lighting application. When a light-emitting diode is turned on, the current passing through the light-emitting diode is called forward operating current (I.sub.f) and the voltage cross the light-emitting diode measured under the forward operating current is called forward voltage (V.sub.f).

"The advantage of the light-emitting diode is low power consumption, but it is more important to have sufficient light in daily life. In addition to increase the amount of light-emitting diodes, the operating current can also be increased to enhance the luminance intensity of each light-emitting diode. However, the increase of operating current of a light-emitting diode also increases the product of the forward operating current and forward voltage which increases the power that is turned to heat. In order to drive a light-emitting diode under low power consumption and keep the light-emitting diode maintained at sufficient luminance intensity, many efforts have been devoted to lowering the forward voltage of the light-emitting diode to prevent the product of the forward voltage and the forward current from being too large and avoid excess energy becoming heat.

"The light-emitting diodes can be further combined with a sub-mount to form a light emitting device. The light-emitting device comprises a sub-mount with circuit; a solder on the sub-mount fixing the light-emitting diode on the sub-mount and electrically connecting the base of the light-emitting diode and the circuit of the sub-mount; and an electrical connection structure electrically connecting the electrode pad of the light-emitting diode and the circuit of the sub-mount; wherein the above sub-mount can be a lead frame or a large size mounting substrate in convenience of designing circuit of the light-emitting device and improving its heat dissipation."

As a supplement to the background information on this patent application, VerticalNews correspondents also obtained the inventors' summary information for this patent application: "The present application discloses a light emitting device comprising a first semiconductor layer, an active layer on the first semiconductor layer, a second semiconductor layer on the active layer, and a semiconductor contact layer on the second semiconductor layer. The second semiconductor layer comprises a first sub-layer and a second sub-layer on the first sub-layer, wherein the second sub-layer comprises Al.sub.xGa.sub.1-xN (0

"The present application discloses a method of manufacturing a light emitting device, comprising providing a substrate, forming a first semiconductor layer on the substrate, forming an active layer on the first semiconductor layer, and epitaxially forming a second semiconductor layer comprising Al.sub.xGa.sub.1-xN(0

BRIEF DESCRIPTION OF THE DRAWINGS

"FIG. 1 shows an embodiment of a first light-emitting stack in accordance with an embodiment of the present disclosure.

"FIG. 2 shows an embodiment of a second semiconductor layer in accordance with an embodiment of the present disclosure.

"FIG. 3 shows an embodiment of a second light-emitting stack in accordance with an embodiment of the present disclosure.

"FIG. 4 shows an embodiment of a third light-emitting stack in accordance with an embodiment of the present disclosure."

For additional information on this patent application, see: LIN, Yu-Yao; KO, Tsun-Kai; TSENG, Chien-Yuan; CHEN, Yen-Chih; YU, Chun-Ta; LING, Shih-Chun; YEN, Cheng-Hsiung; WU, Hsin-Hsien. Light-Emitting Diode and the Manufacture Method of the Same. Filed January 23, 2014 and posted August 14, 2014. Patent URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&u=%2Fnetahtml%2FPTO%2Fsearch-adv.html&r=6267&p=126&f=G&l=50&d=PG01&S1=20140807.PD.&OS=PD/20140807&RS=PD/20140807

Keywords for this news article include: Electronics, Semiconductor, Epistar Corporation, Light-emitting Diode.

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Source: Electronics Newsweekly


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