The patent's assignee is
News editors obtained the following quote from the background information supplied by the inventors: "The present disclosure relates to a light-emitting diode and the manufacture method of the same, and in particular to improve opto-electrical characteristics of a light-emitting diode.
"The light-emitting diodes (LEDs) of the solid-state lighting elements have the characteristics of the low power consumption, low heat generation, long operational life, shockproof, small volume, quick response and good opto-electrical property like light emission with a stable wavelength, so the LEDs have been widely used in various lighting application. When a light-emitting diode is turned on, the current passing through the light-emitting diode is called forward operating current (I.sub.f) and the voltage cross the light-emitting diode measured under the forward operating current is called forward voltage (V.sub.f).
"The advantage of the light-emitting diode is low power consumption, but it is more important to have sufficient light in daily life. In addition to increase the amount of light-emitting diodes, the operating current can also be increased to enhance the luminance intensity of each light-emitting diode. However, the increase of operating current of a light-emitting diode also increases the product of the forward operating current and forward voltage which increases the power that is turned to heat. In order to drive a light-emitting diode under low power consumption and keep the light-emitting diode maintained at sufficient luminance intensity, many efforts have been devoted to lowering the forward voltage of the light-emitting diode to prevent the product of the forward voltage and the forward current from being too large and avoid excess energy becoming heat.
"The light-emitting diodes can be further combined with a sub-mount to form a light emitting device. The light-emitting device comprises a sub-mount with circuit; a solder on the sub-mount fixing the light-emitting diode on the sub-mount and electrically connecting the base of the light-emitting diode and the circuit of the sub-mount; and an electrical connection structure electrically connecting the electrode pad of the light-emitting diode and the circuit of the sub-mount; wherein the above sub-mount can be a lead frame or a large size mounting substrate in convenience of designing circuit of the light-emitting device and improving its heat dissipation."
As a supplement to the background information on this patent application, VerticalNews correspondents also obtained the inventors' summary information for this patent application: "The present application discloses a light emitting device comprising a first semiconductor layer, an active layer on the first semiconductor layer, a second semiconductor layer on the active layer, and a semiconductor contact layer on the second semiconductor layer. The second semiconductor layer comprises a first sub-layer and a second sub-layer on the first sub-layer, wherein the second sub-layer comprises Al.sub.xGa.sub.1-xN (0
"The present application discloses a method of manufacturing a light emitting device, comprising providing a substrate, forming a first semiconductor layer on the substrate, forming an active layer on the first semiconductor layer, and epitaxially forming a second semiconductor layer comprising Al.sub.xGa.sub.1-xN(0
BRIEF DESCRIPTION OF THE DRAWINGS
"FIG. 1 shows an embodiment of a first light-emitting stack in accordance with an embodiment of the present disclosure.
"FIG. 2 shows an embodiment of a second semiconductor layer in accordance with an embodiment of the present disclosure.
"FIG. 3 shows an embodiment of a second light-emitting stack in accordance with an embodiment of the present disclosure.
"FIG. 4 shows an embodiment of a third light-emitting stack in accordance with an embodiment of the present disclosure."
For additional information on this patent application, see: LIN, Yu-Yao; KO, Tsun-Kai; TSENG, Chien-Yuan; CHEN, Yen-Chih; YU, Chun-Ta; LING, Shih-Chun; YEN, Cheng-Hsiung; WU, Hsin-Hsien. Light-Emitting Diode and the Manufacture Method of the Same. Filed
Keywords for this news article include: Electronics, Semiconductor,
Our reports deliver fact-based news of research and discoveries from around the world. Copyright 2014, NewsRx LLC
OCTOBER 31, 2014
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