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Patent Issued for Top Emission Inverted Organic Light Emitting Diode Display Device Having Electrode Patterns Formed from a Same Material as a...

August 27, 2014



Patent Issued for Top Emission Inverted Organic Light Emitting Diode Display Device Having Electrode Patterns Formed from a Same Material as a Conductive Pattern Contacting the TFT

By a News Reporter-Staff News Editor at Electronics Newsweekly -- LG Display Co., Ltd. (Seoul, KR) has been issued patent number 8803172, according to news reporting originating out of Alexandria, Virginia, by VerticalNews editors.

The patent's inventors are Kim, Yong Chul (Gyeonggi-do, KR); Yoo, Juhn Suk (Gyeonggi-do, KR).

This patent was filed on December 16, 2009 and was published online on August 12, 2014.

From the background information supplied by the inventors, news correspondents obtained the following quote: "This disclosure relates to an organic light emitting diode display (OLED) device, and more particularly to an OLED device of the top-emission inverted type adapted to reduce the process of forming a thin film transistor on a metal substrate, and a manufacturing method thereof.

"OLED devices of a self luminous type can be light and slim since they do not need the backlight units required for liquid crystal display devices. Also, the OLED devices can be manufactured through a simple process. Moreover, the OLED devices have a low voltage drive, a high luminous efficiency, and a wide viewing angle. In view of these points, the OLED devices have received a growing amount of attention as one of next-generation display devices.

"The OLED devices each include thin film transistors arranged on a substrate, organic light emitting diodes connected to the respective thin film transistors, and a seal substrate covering the organic light emitting diodes. The organic light emitting diodes are configured to emit light. Such OLED devices can be classified into a bottom emission type and a top emission type according to light emitting directions.

"The top emission OLED device is configured to emit light through a seal substrate. As such, the top emission OLED device has a larger aperture ratio than that of the bottom emission OLED device. Moreover, the top emission OLED device can be designed in a variety of formations because the aperture ratio is not subject to a driving element.

"However, the top emission OLED device employs a process of forming a thin film transistor using a maximum of 11 masks. In other words, the formation process of a thin film transistor is very complex. As such, the manufacturing efficiency of the top emission OLED device is deteriorated and manufacturing costs of the top emission OLED device increases.

"Moreover, the top emission OLED device includes cathode electrodes formed by patterning a corrodible conductive material in pixels, and an organic light emission layer and anodes sequentially formed on the cathode electrodes. As such, the cathode electrodes are very easily corroded. Such corrosion of the cathode electrodes deteriorates the reliability of the top emission OLED device."

Supplementing the background information on this patent, VerticalNews reporters also obtained the inventors' summary information for this patent: "Accordingly, the present embodiments are directed to a top emission inverted OLED device that substantially obviates one or more of problems due to the limitations and disadvantages of the related art, and a manufacturing method thereof.

"An object of the present embodiments is to provide a top emission inverted OLED device with enhanced reliability and a manufacturing method thereof.

"Another object of the present embodiments is to provide a top emission OLED device that is adapted to simplify a manufacturing process, and a manufacturing method thereof.

"Additional features and advantages of the embodiments will be set forth in the description which follows, and in part will be apparent from the description, or may be learned by practice of the embodiments. The advantages of the embodiments will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.

"According to one general aspect of the present embodiment, a top emission inverted OLED device includes: first and second pad portions disposed on peripheral areas which correspond to outer sides of a light generation area on a metal substrate; at least one thin film transistor formed on the light generation area; a passivation layer formed to cover the thin film transistor on the metal substrate and include contact holes which partially expose the thin film transistor and the first and second pad portions; a stacked pattern of first and second conductive patterns formed on the passivation layer and configured to make contact with the exposed part of the thin film transistor through one of the contact holes; a cathode electrode formed on the light generation area and electrically connected to the second conductive pattern; an organic light emission layer disposed on the cathode electrode; an anode electrode disposed on the organic light emission layer and formed from a transparent metal material; and electrode patterns formed from the same material as the second conductive pattern on the rest of the contact holes which expose the first and second pad portions.

"A top emission inverted OLED device according to another aspect of the present embodiment includes: first and second pad portions disposed on peripheral areas which correspond to outer sides of a light generation area on a metal substrate; at least one thin film transistor formed on the light generation area; a passivation layer formed to cover the thin film transistor on the metal substrate and include contact holes which partially expose the thin film transistor and the first and second pad portions; a conductive pattern formed on the passivation layer and configured to make contact with the exposed part of the thin film transistor through one of the contact holes; a first cathode electrode formed on the light generation area and electrically connected to the conductive pattern; a second cathode electrode formed on the first cathode electrode; an organic light emission layer disposed on the second cathode electrode; an anode electrode disposed on the organic light emission layer and formed from a transparent metal material; and electrode patterns formed from the same material as the conductive pattern on the rest of the contact holes which expose the first and second pad portions.

"A method of manufacturing a top emission inverted OLED device, according to still another aspect of the present embodiment, includes: preparing a metal substrate defined into a light generation area and first and second pad areas positioned adjacent thereto; forming at least one thin film transistor on the light generation area; forming a passivation layer which is configured to cover the thin film transistor on the metal substrate and include contact holes partially exposing the thin film transistor and the first and second pad areas; forming first and second conductive patterns, which are configured to make contact with the exposed part of the thin film transistor through one of the contact holes, by sequentially depositing and patterning first and second conductive layers on the passivation layer; forming a planarization layer, which is configured to partially expose the thin film transistor and the first and second pad areas, on the metal substrate with the first and second conductive patterns; forming a cathode electrode, which is electrically connected to the second conductive pattern, on the metal substrate covered with the planarization layer; forming a bank pattern, which is configured to partially expose the cathode electrode and the first and second pad areas, on the metal substrate with the cathode electrode; forming an organic light emission layer on the exposed cathode electrode; and forming an anode electrode of a transparent conductive material on the organic light emission layer, wherein electrode patterns are formed, from the same material as the second conductive pattern, on the rest of the contact holes which expose the first and second pad areas.

"A method of manufacturing a top emission inverted OLED device, according to further still another aspect of the present embodiment, includes: preparing a metal substrate defined into a light generation area and first and second pad areas positioned adjacent thereto; forming at least one thin film transistor on the light generation area; forming a passivation layer which is configured to cover the thin film transistor on the metal substrate and include contact holes partially exposing the thin film transistor and the first and second pad areas; forming a conductive pattern, which is configured to make contact with the exposed part of the thin film transistor through one of the contact holes, by depositing and patterning a conductive layer on the passivation layer; forming a planarization layer, which is configured to partially expose the thin film transistor and the first and second pad areas, on the metal substrate with the conductive pattern; forming first and second cathode electrodes, which is electrically connected to the conductive pattern, by sequentially stacking and patterning first and second metal layers on the metal substrate covered with the planarization layer; forming a bank pattern, which is configured to partially expose the second cathode electrode and the first and second pad areas, by providing and patterning a bank layer on the metal substrate with the first and second cathode electrodes; forming an organic light emission layer on the exposed second cathode electrode; and forming an anode electrode of a transparent metal material on the organic light emission layer, wherein electrode patterns are formed, from the same material as the conductive pattern, on the rest of the contact holes which expose the first and second pad areas.

"Other systems, methods, features and advantages will be, or will become, apparent to one with skill in the art upon examination of the following figures and detailed description. It is intended that all such additional systems, methods, features and advantages be included within this description, be within the scope of the invention, and be protected by the following claims. Nothing in this section should be taken as a limitation on those claims. Further aspects and advantages are discussed below in conjunction with the embodiments. It is to be understood that both the foregoing general description and the following detailed description of the present disclosure are exemplary and explanatory and are intended to provide further explanation of the disclosure as claimed."

For the URL and additional information on this patent, see: Kim, Yong Chul; Yoo, Juhn Suk. Top Emission Inverted Organic Light Emitting Diode Display Device Having Electrode Patterns Formed from a Same Material as a Conductive Pattern Contacting the TFT. U.S. Patent Number 8803172, filed December 16, 2009, and published online on August 12, 2014. Patent URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8803172.PN.&OS=PN/8803172RS=PN/8803172

Keywords for this news article include: Electronics, LG Display Co. Ltd., Light-emitting Diode.

Our reports deliver fact-based news of research and discoveries from around the world. Copyright 2014, NewsRx LLC


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Source: Electronics Newsweekly


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