News Column

Patent Issued for Method of Fabricating Semiconductor Die Using Handling Layer

August 27, 2014



By a News Reporter-Staff News Editor at Electronics Newsweekly -- A patent by the inventors Chu, Chen-Fu (Hsinchu, TW); Doan, Trung Tri (Baoshan Township, TW); Cheng, Hao-Chun (Pingtung County 928, TW); Fan, Feng-Hsu (Jhonghe, TW); Wang, Fu-Hsien (Sinpu Township, TW), filed on May 17, 2011, was published online on August 12, 2014, according to news reporting originating from Alexandria, Virginia, by VerticalNews correspondents.

Patent number 8802469 is assigned to SemiLEDS Optoelectronics Co., Ltd. (Chu-Nan, TW).

The following quote was obtained by the news editors from the background information supplied by the inventors: "Embodiments of the present invention generally relate to a method of semiconductor fabrication and, more particularly, to a method of separating multiple semiconductor dies.

"A wide variety of electronic devices, ranging from microprocessors to light-emitting diode (LED) structures, are typically formed in relatively large numbers as die on semiconductor wafer substrates. After formation, the devices must be separated for final packaging, typically via mechanical saw, 'scribing and break,' or laser.

"In many cases, the devices must be placed on some type of device for final assembly, such as a tape allowing manipulation of the devices by a machine, such as a robot used in automated assembly. Due to the delicate nature of the unpackaged devices, handling the devices in preparation of separation or during the separation process presents a challenge.

"Accordingly, what is needed is a process to efficiently separate dies."

In addition to the background information obtained for this patent, VerticalNews journalists also obtained the inventors' summary information for this patent: "One embodiment of the present invention is a method of fabricating a plurality of semiconductor dies. The method generally includes forming one or more semiconductor layers on a substrate; defining the plurality of semiconductor dies separated by streets in the semiconductor layers; depositing one or more metal layers above the semiconductor layers; removing at least a portion of the metal layers disposed in the streets; forming a first handling layer above the metal layers; removing the substrate to expose a surface of the semiconductor layers; adding a second handling layer to the exposed surface of the semiconductor layers; removing the first handling layer to expose a surface of the metal layers; applying an adhesive to the exposed surface of the metal layers; and removing the second handling layer.

"Another embodiment of the present invention is a method of fabricating a plurality of semiconductor dies. The method generally includes forming one or more semiconductor layers on a substrate; defining the plurality of semiconductor dies separated by streets in the semiconductor layers; depositing one or more metal layers above the semiconductor layers; depositing a barrier layer above the metal layers; removing at least a portion of the barrier layer and the metal layers disposed in the streets; forming a first handling layer above the barrier layer; removing the substrate to expose a surface of the semiconductor layers; adding a second handling layer to the exposed surface of the semiconductor layers; removing the first handling layer to expose the barrier layer; applying an adhesive to the barrier layer; and removing the second handling layer.

"Yet another embodiment of the present invention is a method of fabricating a plurality of semiconductor dies. The method generally includes forming one or more semiconductor layers on a substrate; defining the plurality of semiconductor dies separated by streets in the semiconductor layers; depositing one or more connected conductor layers above the semiconductor layers; forming stop electroplating (EP) areas in the streets; depositing one or more metal layers above the connected conductor layers, wherein the stop EP areas discourage metal deposition in at least portions of the streets; removing the stop EP areas; removing at least a portion of the connected conductor layers disposed in the streets; forming a first handling layer above the metal layers; removing the substrate to expose a surface of the semiconductor layers; adding a second handling layer to the exposed surface of the semiconductor layers; removing the first handling layer to expose a surface of the metal layers; applying an adhesive to the exposed surface of the metal layers; and removing the second handling layer.

"Yet another embodiment of the present invention is a method of fabricating a plurality of semiconductor dies. The method generally includes forming one or more semiconductor layers on a substrate; defining the plurality of semiconductor dies separated by streets in the semiconductor layers; depositing one or more connected conductor layers above the semiconductor layers; forming stop EP areas in the streets; depositing a plurality of metal layers above the connected conductor layers, wherein the stop EP areas discourage metal deposition in at least portions of the streets; removing the stop EP areas; depositing a barrier layer to protect the connected conductor layers and the metal layers; and removing the substrate to expose a surface of the semiconductor layers. Using this method, only the connected conductor layers may need to be cut through to separate the dies versus have to cut through thick metal layers. In this manner, the total thickness of the semiconductor dies dictated by packaging and the thickness of the street required for handling the semiconductor dies after the substrate is removed may be independently optimized.

"Yet another embodiment of the present invention provides a method of fabricating a plurality of semiconductor dies. The method generally includes forming one or more semiconductor layers on a substrate, defining the plurality of semiconductor dies separated by streets in the semiconductor layers, depositing a first handling layer above the semiconductor layers, depositing a plurality of metal layers above the first handling layer, removing at least a portion of the metal layers disposed in the streets, removing the substrate to expose a surface of the semiconductor layers, and applying an adhesive above the metal layers.

"Yet another embodiment of the present invention provides a method of fabricating a plurality of semiconductor dies. The method generally includes forming one or more semiconductor layers on a substrate; defining the plurality of semiconductor dies separated by streets in the semiconductor layers; depositing a first handling layer above the semiconductor layers; forming stop EP areas in the streets; depositing a plurality of metal layers above the first handling layer, wherein the stop EP areas discourage metal deposition in at least portions of the streets; removing the stop EP areas; removing at least a portion of the first handling layer disposed in the streets; removing the substrate to expose a surface of the semiconductor layers; and applying an adhesive above the metal layers.

"Yet another embodiment of the present invention provides a method of fabricating a plurality of semiconductor dies. The method generally includes forming one or more semiconductor layers on a substrate, defining the plurality of semiconductor dies separated by streets in the semiconductor layers, depositing a handling layer above the semiconductor layers, forming stop EP areas in the streets, depositing a plurality of metal layers above the handling layer, wherein the stop EP areas discourage metal deposition in at least portions of the streets, and removing the stop EP areas.

"Yet another embodiment of the present invention provides a method of fabricating a plurality of semiconductor dies. The method generally includes forming one or more semiconductor layers on a substrate; defining the plurality of semiconductor dies separated by streets in the semiconductor layers; depositing a handling layer above the semiconductor layers, wherein the thickness of the handling layer is dependent on a hardness of a material used in the handling layer; depositing a plurality of metal layers above the handling layer; removing the substrate to expose a surface of the semiconductor layers, wherein the handling layer provides a rigid support structure for the plurality of semiconductor dies for subsequent processing."

URL and more information on this patent, see: Chu, Chen-Fu; Doan, Trung Tri; Cheng, Hao-Chun; Fan, Feng-Hsu; Wang, Fu-Hsien. Method of Fabricating Semiconductor Die Using Handling Layer. U.S. Patent Number 8802469, filed May 17, 2011, and published online on August 12, 2014. Patent URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8802469.PN.&OS=PN/8802469RS=PN/8802469

Keywords for this news article include: Semiconductor, SemiLEDS Optoelectronics Co. Ltd..

Our reports deliver fact-based news of research and discoveries from around the world. Copyright 2014, NewsRx LLC


For more stories covering the world of technology, please see HispanicBusiness' Tech Channel



Source: Electronics Newsweekly


Story Tools






HispanicBusiness.com Facebook Linkedin Twitter RSS Feed Email Alerts & Newsletters