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Patent Issued for Memory for a Voltage Regulator Circuit

August 27, 2014



By a News Reporter-Staff News Editor at Electronics Newsweekly -- From Alexandria, Virginia, VerticalNews journalists report that a patent by the inventors Chen, Shi-Wen (Hsinchu, TW); Lu, Hsin-Pang (Hsinchu, TW); Tsai, Chung-Cheng (Taichung, TW); Mou, Ya-Nan (Hsinchu, TW), filed on March 26, 2014, was published online on August 12, 2014.

The patent's assignee for patent number 8804440 is United Microelectronics Corporation (Hsinchu, TW).

News editors obtained the following quote from the background information supplied by the inventors: "Non-volatile memory is capable of storing data without being supplied with external electrical power. Because of having the feature of no external power consumption, the non-volatile memory is particularly applicable to be used in portable apparatuses.

"The non-volatile memory can have three operations: read, write and erase; wherein the write operation is also referred to as the program operation. Basically, the three operations of the non-volatile memory require respective different voltages. Because the non-volatile memory highly demands a more accurate programming voltage level while executing the program operation, the associated programming voltage is required to be much accurate accordingly."

As a supplement to the background information on this patent, VerticalNews correspondents also obtained the inventors' summary information for this patent: "The present invention provides a memory, in which a supply voltage used as a programming voltage is generated. The memory avoids the effect of temperature and manufacturing variations of the components, disposed on the transmission path of the programming voltage, on the programming voltage.

"The present invention further provides a decoder for the memory, comprising an input terminal and a plurality of output terminals, the decoder being configured to have the output terminals thereof electrically coupled to the source lines.

"The present invention further provides a voltage regulator circuit for the memory, configured to generate a feedback signal according to a signal outputted from one output terminal of the decoder and a control signal, and consequently adjust the value of the supply voltage according to the feedback signal.

"An embodiment of the present invention provides a memory, which includes a memory array, a decoder and a voltage regulator circuit. The memory array includes a plurality of source lines and a plurality of memory units, and each of the source lines is electrically coupled to a respective group of memory units. The decoder includes an input terminal and a plurality of output terminals. The decoder is configured to have the output terminals thereof electrically coupled to the source lines, respectively. The voltage regulator circuit is configured to provide a supply voltage to the input terminal of the decoder and electrically coupled to the output terminals of the decoder. The voltage regulator circuit is configured to generate a feedback signal according to a signal outputted from one output terminal of the decoder and a control signal, and consequently adjust the value of the supply voltage according to the feedback signal. In addition, the memory further includes a supply voltage switch electrically coupled between an output terminal of the voltage regulator circuit and the input terminal of the decoder and configured to receive the supply voltage and a predetermined voltage and consequently selectively output, according to a control command, either the supply voltage or the predetermined voltage to the input terminal of the decoder.

"In the embodiment of present invention, the control signal is generated according to a comparison result, the comparison result indicates the number of different bits existing between output data and input data of the memory array, and the output data are storage data stored in a plurality of memory units of the memory array processed by a program operation according to the input data.

"In summary, in the memory according to the present invention, the supply voltage generated by the voltage regulator circuit is used as a programming voltage. Because the voltage regulator circuit is electrically coupled to the output terminals of the decoder and is configured to generate a feedback signal according to a signal outputted from one output terminal of the decoder and the control signal, and consequently adjust the value of the supply voltage according to the feedback signal of the voltage regulator circuit, the memory avoids the effect of temperature and manufacturing variations of the components, disposed on the transmission path of the programming voltage, on the programming voltage."

For additional information on this patent, see: Chen, Shi-Wen; Lu, Hsin-Pang; Tsai, Chung-Cheng; Mou, Ya-Nan. Memory for a Voltage Regulator Circuit. U.S. Patent Number 8804440, filed March 26, 2014, and published online on August 12, 2014. Patent URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8804440.PN.&OS=PN/8804440RS=PN/8804440

Keywords for this news article include: United Microelectronics Corporation.

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Source: Electronics Newsweekly


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