News Column

Reports Summarize Atomic Layer Deposition Findings from University of Oslo

August 22, 2014

By a News Reporter-Staff News Editor at Science Letter -- A new study on Atomic Layer Deposition is now available. According to news reporting originating from Oslo, Norway, by NewsRx correspondents, research stated, "The combination of the two well behaved binary oxide ALD processes, NiO (Ni(acac)(2) + O-3) and (TIO2 ((TiOPr)-Pr-i)(4) + H2O), provide excellent means for depositing thin films of NixTi1-xOy with highly controllable stoichiometry. In particular, stoichiometric NiTiO3 was obtained for a 1:1 molar pulsing ratio of NiO:TiO2."

Our news editors obtained a quote from the research from the University of Oslo, "An ALD window was observed between 175 and 275 degrees C for this composition, within which the growth rate remained unchanged at similar to 43 pm/subcycle. The measured refractive index was 2.42 and a direct band gap of 2.27 eV was found. The described process yielded smooth (0.4-0.9 nm RMS roughness), crystalline films of NiTiO3 as-deposited on Si (1 0 0) substrates, with a strained (0 0 1) orientation."

According to the news editors, the research concluded: "Annealing at 650 degrees C for 15 min relaxed the strain and improved the crystallinity."

For more information on this research see: Atomic Layer Deposition of oriented nickel titanate (NiTiO3). Applied Surface Science, 2014;311():478-483. Applied Surface Science can be contacted at: Elsevier Science Bv, PO Box 211, 1000 Ae Amsterdam, Netherlands. (Elsevier -; Applied Surface Science -

The news editors report that additional information may be obtained by contacting J.E. Bratvold, University of Oslo, Dept. of Chem, Center Mat Sci & Nanotechnol SMN, N-0315 Oslo, Norway. Additional authors for this research include H. Fjellvag and O. Nilsen (see also Atomic Layer Deposition).

Keywords for this news article include: Oslo, Norway, Europe, Nanotechnology, Emerging Technologies, Atomic Layer Deposition

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Source: Science Letter

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