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New Findings from National Tsing Hua University in the Area of Materials Science Described (Enhancing the Electrical Properties of a Flexible...

August 19, 2014



New Findings from National Tsing Hua University in the Area of Materials Science Described (Enhancing the Electrical Properties of a Flexible Transparent Graphene-Based Field-Effect Transistor Using Electropolished Copper Foil for Graphene ...)

By a News Reporter-Staff News Editor at Journal of Technology -- Researchers detail new data in Materials Science. According to news reporting out of Hsinchu, Taiwan, by VerticalNews editors, research stated, "Flexible transparent graphene-based field-effect transistors (Gr-FETs) were fabricated using large-area single-layer graphene synthesized through low-pressure chemical vapor deposition on a pretreated copper (Cu) foil, followed by transfer of the graphene from the Cu foil to a poly(ethylene terephthalate) (PET) substrate. The electropolishing method was adopted to smooth the surface of the Cu foil, which is a crucial factor because it affects the defect density of graphene films on the PET substrate after transfer and the electronic transport property of the graphene-based devices."

Our news journalists obtained a quote from the research from National Tsing Hua University, "The influence of the electropolishing process on the graphene properties was examined using a Raman spectroscope, a scanning electron microscope, and an optical microscope. When the electropolishing process was adopted to improve the graphene quality, the carrier mobility of the flexible transparent Gr-FETs was enhanced from 90 to 340 cm(2)/(V s)."

According to the news editors, the research concluded: "Furthermore, variation of the carrier mobility was lower than 10% when the bending radius of the flexible device was decreased from 6.0 to 1.0 cm."

For more information on this research see: Enhancing the Electrical Properties of a Flexible Transparent Graphene-Based Field-Effect Transistor Using Electropolished Copper Foil for Graphene Growth. ACS Applied Materials & Interfaces, 2014;6(13):10489-10496. ACS Applied Materials & Interfaces can be contacted at: Amer Chemical Soc, 1155 16TH St, NW, Washington, DC 20036, USA. (American Chemical Society - www.acs.org; ACS Applied Materials & Interfaces - www.pubs.acs.org/journal/aamick)

Our news journalists report that additional information may be obtained by contacting L.W. Tsai, Natl Tsing Hua Univ, Dept. of Mat Sci & Engn, Hsinchu 30013, Taiwan.

Keywords for this news article include: Asia, Taiwan, Hsinchu, Materials Science

Our reports deliver fact-based news of research and discoveries from around the world. Copyright 2014, NewsRx LLC


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Source: Journal of Technology


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