The news reporters obtained a quote from the research, "The films are first conductive between 0 and 2% partial oxygen pressure, then they are semiconductor and p-type between 2 and 6% partial oxygen pressure, between 6 and 9% partial oxygen pressure the conduction is very low and the films seem to ben-type and finally, for a partial oxygen pressure higher than 9%, the conduction is p-type. The morphology of these films depends also on the O-2 partial pressure. When the NiO films is thick of 4 nm, its peak to valley roughness is 6 nm, when it is sputtered with a gas containing 7.4% of oxygen, while it is more than double, 13.5 nm, when the partial pressure of oxygen is 16.67%. This roughness implies that a forming process, i.e. a decrease of the leakage current, is necessary for the OPVs. The forming process is not necessary if the NiO ABL is thick of 20 nm."
According to the news reporters, the research concluded: "In that case it is shown that optimum conversion efficiency is achieved with NiO ABL annealed 10 min at 400 degrees C."
For more information on this research see: Effect of the deposition conditions of NiO anode buffer layers in organic solar cells, on the properties of these cells. Applied Surface Science, 2014;311():110-116. Applied Surface Science can be contacted at: Elsevier Science Bv, PO Box 211, 1000 Ae
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OCTOBER 30, 2014
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