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Researchers Submit Patent Application, "Target Supply Device and Euv Light Generation Chamber", for Approval

August 20, 2014



By a News Reporter-Staff News Editor at Electronics Newsweekly -- From Washington, D.C., VerticalNews journalists report that a patent application by the inventor UMEDA, Hiroshi (Oyama-shi, JP), filed on January 21, 2014, was made available online on August 7, 2014.

The patent's assignee is Gigaphoton Inc.

News editors obtained the following quote from the background information supplied by the inventors: "The present disclosure relates to target supply devices and EUV light generation chambers.

"In recent years, semiconductor production processes have become capable of producing semiconductor devices with increasingly fine feature sizes, as photolithography has been making rapid progress toward finer fabrication. In the next generation of semiconductor production processes, microfabrication with feature sizes at 60 nm to 45 nm, and further, microfabrication with feature sizes of 32 nm or less will be required. In order to meet the demand for microfabrication with feature sizes of 32 nm or less, for example, an exposure apparatus is needed in which a system for generating EUV light at a wavelength of approximately 13 nm is combined with a reduced projection reflective optical system.

"Three kinds of systems for generating EUV light are known in general, which include a Laser Produced Plasma (LPP) type system in which plasma is generated by irradiating a target material with a laser beam, a Discharge Produced Plasma (DPP) type system in which plasma is generated by electric discharge, and a Synchrotron Radiation (SR) type system in which orbital radiation is used to generate plasma."

As a supplement to the background information on this patent application, VerticalNews correspondents also obtained the inventor's summary information for this patent application: "A target supply device according to an aspect of the present disclosure may be a target supply device that supplies a target material to a plasma generation region, and may include a tank, a first electrode, a first potential setting unit, a second electrode, a second potential setting unit, and a charge neutralization unit. The tank may include a nozzle. The first electrode may be disposed within the tank. The first potential setting unit may be configured to set a potential at the first electrode to a first potential. The second electrode may be provided with a first through-hole and disposed so that a center axis of the nozzle is positioned within the first through-hole. The second potential setting unit may be configured to set a potential at the second electrode to a second potential that is different from the first potential. The charge neutralization unit may neutralize a charge of the target material that passes through a first region located between the second electrode and the plasma generation region.

"An EUV light generation chamber according to an aspect of the present disclosure may be an EUV light generation chamber for irradiating a target material supplied to a plasma generation region with a laser beam, and may include a chamber, a tank, a first electrode, a second electrode, and a charge neutralization unit. The chamber may include an introduction hole that introduces the laser beam. The tank may include a nozzle and may be anchored to the chamber so that the nozzle is positioned within the chamber. The first electrode may be disposed within the tank. The second electrode may be provided with a first through-hole and disposed so that a center axis of the nozzle is positioned within the first through-hole. The charge neutralization unit may neutralize a charge of the target material that passes through a first region located between the second electrode and the plasma generation region.

BRIEF DESCRIPTION OF THE DRAWINGS

"Hereinafter, selected embodiments of the present disclosure will be described with reference to the accompanying drawings.

"FIG. 1 schematically illustrates an exemplary configuration of an EUV light generation apparatus.

"FIG. 2 schematically illustrates the configuration of an EUV light generation apparatus that includes a target supply device according to a first embodiment.

"FIG. 3 schematically illustrates the configuration of the target supply device according to the first embodiment.

"FIG. 4 is a diagram illustrating a phenomenon in which a trajectory of targets shifts, and illustrates a state in which a target supply device is outputting targets.

"FIG. 5 schematically illustrates the configuration of a target supply device according to a second embodiment.

"FIG. 6 schematically illustrates the configuration of a target supply device according to a third embodiment.

"FIG. 7 schematically illustrates the configuration of a target supply device according to a fourth embodiment.

"FIG. 8 schematically illustrates the configuration of a target supply device according to fifth and sixth embodiments.

"FIG. 9 schematically illustrates the configuration of an EUV light generation chamber according to a seventh embodiment.

"FIG. 10 schematically illustrates the configuration of a target supply device according to an eighth embodiment."

For additional information on this patent application, see: UMEDA, Hiroshi. Target Supply Device and Euv Light Generation Chamber. Filed January 21, 2014 and posted August 7, 2014. Patent URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&u=%2Fnetahtml%2FPTO%2Fsearch-adv.html&r=5853&p=118&f=G&l=50&d=PG01&S1=20140731.PD.&OS=PD/20140731&RS=PD/20140731

Keywords for this news article include: Electronics, Semiconductor, Gigaphoton Inc..

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Source: Electronics Newsweekly


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