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Patent Issued for Power Semiconductor Module

August 20, 2014



By a News Reporter-Staff News Editor at Electronics Newsweekly -- A patent by the inventors Lee, Young Ki (Gyunggi-do, KR); Seo, Dong Soo (Gyunggi-do, KR); Kim, Kwang Soo (Gyunggi-do, KR); Kwak, Young Hoon (Gyunggi-do, KR), filed on December 7, 2011, was published online on August 5, 2014, according to news reporting originating from Alexandria, Virginia, by VerticalNews correspondents.

Patent number 8796730 is assigned to Samsung Electro-Mechanics Co., Ltd. (Gyunggi-Do, KR).

The following quote was obtained by the news editors from the background information supplied by the inventors: "The present invention relates to a power semiconductor module.

"Recently, slimness, high performance, and multi-function have been demanded in home or industrial electronic components. In addition, due to an environmental regulation problem, many efforts for increasing energy efficiency have been conducted.

"Currently, in home appliances such as a washing machine, a refrigerator, an air conditioner, or the like, an inverter module using a power semiconductor has been used in order to raise energy efficiency.

"Therefore, high reliability and multi-function have been demanded in a power semiconductor module used as an inverter.

"Meanwhile, the power semiconductor motor according to the prior art has been disclosed in Japanese Patent Laid-open Publication No. 2000-164800.

"The power semiconductor module according to the prior art includes a diode device stacked on an upper portion of a transistor device mounted on an insulation substrate, using a conductive resin, in order to reduce a longitudinal area thereof.

"However, in the power semiconductor module according to the prior art, each terminal of the transistor and diode devices is electrically connected to a circuit though wire bonding.

"As described above, since the power semiconductor module according to the prior art is connected to the circuit using the wire, a defect is easily generated. As a result, reliability of a product is reduced and sufficient heat radiating characteristics may not be secured."

In addition to the background information obtained for this patent, VerticalNews journalists also obtained the inventors' summary information for this patent: "The present invention has been made in an effort to provide a power semiconductor module having high reliability.

"Further, the present invention has been made in an effort to provide a power semiconductor module having sufficient heat radiating characteristics.

"Further, the present invention has been made in an effort to provide a power semiconductor module having a high-density firm structure.

"According to a preferred embodiment of the present invention, there is provided a power semiconductor module including: a circuit board having gate, emitter, and collector patterns formed thereon; a first semiconductor chip mounted on the circuit board, having gate and emitter terminals each formed on one surface thereof and contacting the gate and emitter patterns, and having a collector terminal formed on the other surface thereof; a second semiconductor chip mounted on the first semiconductor chip, having a cathode terminal formed on one surface thereof and contacting the collector terminal, and having an anode terminal formed on the other surface thereof; a first conductive connection member having one end disposed between the collector terminal of the first semiconductor chip and the cathode terminal of the second semiconductor chip and the other end contacting the collector pattern of the circuit board; and a second conductive connection member having one end contacting the anode terminal of the second semiconductor chip and the other end contacting the emitter pattern of the circuit board.

"When a portion which the first semiconductor chip contacts in the gate and emitter patterns formed on the circuit board is a first area and a portion which the first semiconductor chip does not contact therein is a second area, the first area may have a concave shape in which it is stepped with respect to the second area.

"The first and second conductive connection members may be made of a metal and have a ribbon shape.

"The metal may be copper (Cu).

"The first semiconductor chip may be an insulated gate bipolar transistor (IGBT), and the second semiconductor chip may be a diode.

"The other end of the first conductive connection member may have a bent shape and contact the collector pattern of the circuit board, and the other end of the second conductive connection member may have a bent shape and contact the emitter pattern of the circuit board.

"The gate and emitter patterns of the circuit board and the gate and emitter terminals of the first semiconductor chip may be bonded to each other by soldering.

"The collector terminal of the first semiconductor chip and the first conductive connection member may be bonded to each other by soldering.

"The first conductive connection member and the cathode terminal of the second semiconductor chip may be bonded to each other by soldering.

"The anode terminal of the second semiconductor chip and the second conductive connection member may be bonded to each other by soldering.

"The second conductive connection member and the emitter pattern of the circuit board may be bonded to each other by soldering."

URL and more information on this patent, see: Lee, Young Ki; Seo, Dong Soo; Kim, Kwang Soo; Kwak, Young Hoon. Power Semiconductor Module. U.S. Patent Number 8796730, filed December 7, 2011, and published online on August 5, 2014. Patent URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8796730.PN.&OS=PN/8796730RS=PN/8796730

Keywords for this news article include: Electronics, Circuit Board, Semiconductor, Samsung Electro-Mechanics Co. Ltd..

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Source: Electronics Newsweekly


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