News Column

Patent Issued for Monolithically Integrated Active Snubber

August 20, 2014



By a News Reporter-Staff News Editor at Electronics Newsweekly -- Texas Instruments Incorporated (Dallas, TX) has been issued patent number 8796745, according to news reporting originating out of Alexandria, Virginia, by VerticalNews editors.

The patent's inventor is Kocon, Christopher Boguslaw (Mountain Top, PA).

This patent was filed on July 3, 2012 and was published online on August 5, 2014.

From the background information supplied by the inventors, news correspondents obtained the following quote: "A semiconductor device may be part of or contain a circuit which produces undesired voltage excursions, such as a buck converter circuit which receives an input DC voltage and generates an output DC voltage that is lower than the input voltage. The semiconductor device may include an extended drain metal oxide semiconductor (MOS) transistor, which, during operation of the circuit, switching of the MOS transistor between the on state and the off state may cause undesirable voltage oscillations, commonly referred to as ringing, at the drain node. It may be desirable to add a snubber to the semiconductor device which damps the ringing. Integrating a snubber in the semiconductor device with desired performance and without significantly increasing fabrication cost and complexity of the semiconductor device may be problematic."

Supplementing the background information on this patent, VerticalNews reporters also obtained the inventor's summary information for this patent: "The following presents a simplified summary in order to provide a basic understanding of one or more aspects of the invention. This summary is not an extensive overview of the invention, and is neither intended to identify key or critical elements of the invention, nor to delineate the scope thereof. Rather, the primary purpose of the summary is to present some concepts of the invention in a simplified form as a prelude to a more detailed description that is presented later.

"A semiconductor device containing an extended drain MOS transistor may be formed with an integrated snubber by a process of forming a drain drift region in an extended drain of the MOS transistor, and forming a snubber capacitor including a capacitor dielectric layer and capacitor plate over the extended drain. A snubber resistor is formed over a gate of the MOS transistor and connected in series between the capacitor plate and a source of the MOS transistor. The snubber resistor and snubber capacitor form the integrated snubber for the MOS transistor. The resistor may be formed concurrently with other elements of the semiconductor device."

For the URL and additional information on this patent, see: Kocon, Christopher Boguslaw. Monolithically Integrated Active Snubber. U.S. Patent Number 8796745, filed July 3, 2012, and published online on August 5, 2014. Patent URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8796745.PN.&OS=PN/8796745RS=PN/8796745

Keywords for this news article include: Electronics, Semiconductor, Texas Instruments Incorporated.

Our reports deliver fact-based news of research and discoveries from around the world. Copyright 2014, NewsRx LLC


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Source: Electronics Newsweekly


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