The patent's inventors are Cheng, Cheng-Wei (
This patent was filed on
From the background information supplied by the inventors, news correspondents obtained the following quote: "The present disclosure relates to semiconductor device manufacturing, and more particularly to a method of removing a semiconductor device layer from an underlying base substrate.
"Devices that can be produced in thin-film form have three clear advantages over their bulk counterparts. First, by virtue of less material used, thin-film devices ameliorate the materials cost associated with device production. Second, low device weight is a definite advantage that motivates industrial-level effort for a wide range of thin-film applications. Third, if dimensions are small enough, devices can exhibit mechanical flexibility in their thin-film form. Furthermore, if a device layer is removed from a substrate that can be re-used, additional fabrication cost reduction can be achieved.
"Efforts to (i) create thin-film substrates from bulk materials (i.e., semiconductors) and (ii) form thin-film device layers by removing device layers from an the underlying bulk substrates on which they were formed are ongoing."
Supplementing the background information on this patent, VerticalNews reporters also obtained the inventors' summary information for this patent: "A method of removing a semiconductor device layer from an underlying base substrate is provided in which a sacrificial phosphide-containing layer is formed between a semiconductor device layer and a base substrate. In some embodiments, a semiconductor buffer layer can be formed on an upper surface of the base substrate prior to forming the sacrificial phosphide-containing layer. The resultant structure is then etched utilizing a non-HF etchant to release the semiconductor device layer from the base substrate. After releasing the semiconductor device layer from the base substrate, the base substrate can be re-used.
"The ELO process of the present disclosure has a lower cost associated therewith. Moreover, and as mentioned above, the base substrate can be re-used after performing the ELO process of the present disclosure.
"In one embodiment, the method of the present disclosure includes forming a sacrificial phosphide-containing layer on an upper surface of a base substrate. Next, a semiconductor device layer is formed on an upper surface of the sacrificial phosphide-containing layer. The sacrificial phosphide-containing layer is then removed from between the semiconductor device layer and the base substrate by etching with a non-HF containing etchant.
"In another embodiment, the method of the present disclosure includes forming a semiconductor buffer layer on an upper surface of a base substrate. A sacrificial phosphide-containing layer is then formed on an upper surface of the semiconductor buffer layer. Next, a semiconductor device layer is formed on an upper surface of the sacrificial phosphide-containing layer. The sacrificial phosphide-containing layer located between the semiconductor device layer and the base substrate is then removed by etching with a non-HF containing etchant. Next, the semiconductor buffer layer can be removed from atop the base substrate."
For the URL and additional information on this patent, see: Cheng, Cheng-Wei; Shiu, Kuen-Ting. High Throughput Epitaxial Lift off for
Keywords for this news article include: Electronics, Semiconductor,
Our reports deliver fact-based news of research and discoveries from around the world. Copyright 2014, NewsRx LLC
Most Popular Stories
- Consumer Prices Edge Up, Surprising Economists
- Steris to Add 100 Jobs in Birmingham
- Clinton Rallies New England Women
- Market Jolt Offers a Reality Check for Investors
- Ebola in New York, Mali Raises Travel Jitters
- Do Voters Want Compromise?
- Beepi Eases Peer-to-peer Auto Sales
- Stocks Close Out Best Week in Nearly 2 Years
- Microsoft Earnings Drive Stocks Higher
- Timeline for New York Ebola Doctor