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New Findings from NIMS Update Understanding of Organic Electronics (Improving solution-processed n-type organic field-effect transistors by...

August 20, 2014



New Findings from NIMS Update Understanding of Organic Electronics (Improving solution-processed n-type organic field-effect transistors by transfer-printed metal/semiconductor and semiconductor/semiconductor heterojunctions)

By a News Reporter-Staff News Editor at Electronics Newsweekly -- Fresh data on Organic Electronics are presented in a new report. According to news reporting originating from Ibaraki, Japan, by VerticalNews correspondents, research stated, "Solution-processed n-type organic field effect transistors (OFETs) are in need of proper metal contact for improving injection and mobility, as well as balanced hole mobility for building logic circuit units. We address the two distinct problems by a simple technique of transfer-printing."

Our news editors obtained a quote from the research from NIMS, "Transfer-printed Au contacts on a terrylene-based semiconductor (TDI) significantly reduced the inverse subthreshold slope by 5.6 V/dec and enhanced the linear mobility by over 5 times compared to evaporated Au contacts. Hence, devices with a high-work-function metal (Au) are comparable with those with low-work-function metals (Al and Ca), indicating a fundamental advantage of transfer-printed electrodes in electron injection. We also transfer-printed a poly(3-hexylthiophene) (P3HT) layer onto TDI to construct a double-channel ambipolar transistor by a solution process for the first time. The transistor exhibits balanced hole and electron mobility (3.0 x 10(-3) and 2.8 x 10(-3) cm(2) V-1 s(-1)) even in a coplanar structure with symmetric Au electrodes."

According to the news editors, the research concluded: "The technique is especially useful for reaching intrinsic mobility of new materials, and enables significant enlargement of the material tanks for solution-processed functional heterojunction OFETs."

For more information on this research see: Improving solution-processed n-type organic field-effect transistors by transfer-printed metal/semiconductor and semiconductor/semiconductor heterojunctions. Organic Electronics, 2014;15(8):1884-1889. Organic Electronics can be contacted at: Elsevier Science Bv, PO Box 211, 1000 Ae Amsterdam, Netherlands. (Elsevier - www.elsevier.com; Organic Electronics - www.elsevier.com/wps/product/cws_home/620806)

The news editors report that additional information may be obtained by contacting C. Liu, NIMS, Int Center Mat Nanoarchitecton WPI MANA, Tsukuba, Ibaraki 3050044, Japan. Additional authors for this research include Y. Xu, Z. Liu, H.N. Tsao, K. Mullen, T. Minari, Y.Y. Noh and H. Sirringhaus.

Keywords for this news article include: Asia, Japan, Ibaraki, Semiconductor, Organic Electronics

Our reports deliver fact-based news of research and discoveries from around the world. Copyright 2014, NewsRx LLC


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Source: Electronics Newsweekly


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