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Findings on Organic Electronics Discussed by Investigators at Sichuan University (The transition from bipolaron to triplet-polaron magnetoresistance...

August 20, 2014



Findings on Organic Electronics Discussed by Investigators at Sichuan University (The transition from bipolaron to triplet-polaron magnetoresistance in a single layer organic semiconductor device)

By a News Reporter-Staff News Editor at Electronics Newsweekly -- Data detailed on Organic Electronics have been presented. According to news reporting out of Chengdu, People's Republic of China, by VerticalNews editors, research stated, "We measure the current-voltage-luminescence (I-V-L) and Magneto-Conductance (MC) response of a poly(3-hexyl-thiophene) (P3HT) based device (Au/P3HT(300 nm)/Al) in forward and reverse bias. In reverse bias (

Our news journalists obtained a quote from the research from Sichuan University, "In forward bias, the transition from negative saturation MC (low bias) to positive saturation MC (high bias) occurs when the current density exceeds similar to 10 (2) A cm (2) and coincides with electroluminescence. Under these conditions the triplet density (similar to 10(15) cm (3)) becomes comparable to the hole density (similar to 10(16) cm (3)), consistent with the triplet-polaron interaction theory."

According to the news editors, the research concluded: "From the current density dependence of the MC we conclude that in forward bias both mechanisms must be occurring simultaneously, within a given device, and that the overall sign of the MC results from competition between the two mechanisms."

For more information on this research see: The transition from bipolaron to triplet-polaron magnetoresistance in a single layer organic semiconductor device. Organic Electronics, 2014;15(8):1711-1716. Organic Electronics can be contacted at: Elsevier Science Bv, PO Box 211, 1000 Ae Amsterdam, Netherlands. (Elsevier - www.elsevier.com; Organic Electronics - www.elsevier.com/wps/product/cws_home/620806)

Our news journalists report that additional information may be obtained by contacting H. Gu, Sichuan University, Coll Phys Sci & Technol, Chengdu 610064, People's Republic of China. Additional authors for this research include T. Kreouzis and W.P. Gillin.

Keywords for this news article include: Asia, Chengdu, Physics, Semiconductor, Magnetoresistance, Organic Electronics, People's Republic of China

Our reports deliver fact-based news of research and discoveries from around the world. Copyright 2014, NewsRx LLC


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Source: Electronics Newsweekly


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