News Column

Researchers Submit Patent Application, "Semiconductor Device and Method of Fabricating the Same", for Approval

July 16, 2014



By a News Reporter-Staff News Editor at Electronics Newsweekly -- From Washington, D.C., VerticalNews journalists report that a patent application by the inventors JANG, Jae-June (Hwaseong-si, KR); KIM, Hyun-Ju (Hwaseong-si, KR); PARK, Seo-In (Yongin-si, KR), filed on October 25, 2013, was made available online on July 3, 2014.

The patent's assignee is Samsung Electronics Co., Ltd.

News editors obtained the following quote from the background information supplied by the inventors: "One or more embodiments described herein relate to a semiconductor device.

"Semiconductor devices perform various functions in electronic apparatuses. One type of semiconductor device is a complementary metal oxide semiconductor (CMOS) device formed from NMOS and PMOS devices. Various studies have been performed to improve operational characteristics of these and other semiconductor devices."

As a supplement to the background information on this patent application, VerticalNews correspondents also obtained the inventors' summary information for this patent application: "In accordance with one embodiment, a semiconductor device includes a semiconductor substrate; a drain region in the semiconductor substrate; a body region in the semiconductor substrate and spaced from the drain region; a source region in the body region; and a gate pattern on the semiconductor substrate and including dopants of a first conductivity type, wherein the gate pattern includes a first gate adjacent the source region and a second gate adjacent the drain region, and wherein a concentration of the dopants of the first conductivity type in the first gate is higher than a concentration of the dopants of the first conductivity type in the second gate.

"Also, the drain region may include the first conductivity type dopants and a concentration of the first conductivity type dopants in the drain region may be higher than a concentration of the first conductivity type dopants in the second gate.

"Also, the concentration of the first conductivity type dopants in the drain region may be substantially equal to the concentration of the first conductivity type dopants in the first gate.

"Also, the source region may include the first conductivity type dopants and a concentration of the first conductivity type dopants in the source region may be substantially equal to the concentration of the first conductivity type dopants in the first gate.

"Also, the semiconductor device may further include a first lightly doped drain (LDD) region adjacent the source region and partially overlapping the first gate, wherein the first LDD region may include the first conductivity type dopants and a concentration of the first conductivity type dopants in the first LDD region may be lower than the concentration of the first conductivity type dopants in the first gate.

"Also, the concentration of the first conductivity type dopants in the first LDD region may be substantially equal to the concentration of the first conductivity type dopants in the second gate.

"Also, the semiconductor device may further include a second LDD region disposed adjacent the drain region and partially overlapping the second gate, wherein the second LDD region is spaced from the body region.

"Also, the second LDD region may include the first conductivity type dopants, and a concentration of the first conductivity type dopants in the second LDD region may be substantially equal to the concentration of the first conductivity type dopants in the first LDD region.

"Also, the semiconductor device may include a well disposed in the semiconductor substrate, wherein the body region and the drain region are disposed in the well.

"Also, the body region and well may include second conductivity type dopants, and a concentration of the second conductivity type dopants in the well may be lower than a concentration of the second conductivity type dopants in the body region.

"In accordance with another embodiment, a semiconductor device includes a semiconductor substrate; a source region in the semiconductor substrate; a drain region in the semiconductor substrate and spaced from the source region; a first gate on the semiconductor substrate and disposed between the source region and the drain region; and a second gate disposed on the semiconductor substrate, wherein the second gate is between the first gate and the drain region, and wherein a conductivity of the second gate is different from a conductivity of the first gate. The second gate may contact the first gate.

"Also, a dopant concentration in the second gate may be different from a dopant concentration in the first gate. Also, the semiconductor device may include a body region adjacent the source region and vertically overlapping the first gate, wherein the body region is spaced from the drain region.

"Also, the source region, the drain region, the body region, the first gate, and the second gate may have substantially a same shape extending in a first direction, and a length of the first gate in the first direction and a length of the second gate in the first direction may be larger than a distance between the body region and the source region.

"In accordance with another embodiment, a semiconductor device includes a drain; a source; and a gate pattern between the source and drain, wherein: the gate pattern includes a first gate and a second gate, the first gate forms a first channel between the source and drain, and the second gate forms a second channel adjacent to the first channel between the source and drain, the first gate forming the first channel based on a first threshold voltage and the second gate forming the second channel based on a second threshold voltage different from the first threshold voltage.

"Also, the first gate may have a first concentration of a dopant, the second gate may have a second concentration a dopant different from the first concentration, and the threshold voltage of the first channel may be based on the first concentration of the dopant, and the threshold voltage of the second channel may be based on the second concentration of the dopant. The first channel and the second channel may have different lengths. The first gate may contact the second gate within substantially a same layer.

"Also, the semiconductor device may include a well under the source, wherein the first channel overlaps the well and the second channel does not overlap the well.

BRIEF DESCRIPTION OF THE DRAWINGS

"Features will become apparent to those of ordinary skill in the art by describing in detail exemplary embodiments with reference to the attached drawings in which:

"FIG. 1A illustrates an embodiment of a semiconductor device, and FIG. 1B illustrates cross-sectional views taken along lines I-I' and II-II' of FIG. 1A;

"FIG. 2 illustrates another embodiment of a semiconductor device;

"FIG. 3 illustrates another embodiment of a semiconductor device;

"FIG. 4 illustrates another embodiment of a semiconductor device;

"FIG. 5 illustrates another embodiment of a semiconductor device;

"FIG. 6 illustrates another embodiment of a semiconductor device;

"FIGS. 7A to 7X illustrate an embodiment of a method of fabricating a semiconductor device;

"FIGS. 8A to 8H illustrate another embodiment of a method of fabricating a semiconductor device;

"FIG. 9 illustrates an embodiment of a semiconductor module including a semiconductor device;

"FIG. 10 illustrates an embodiment of a mobile system which including a semiconductor device; and

"FIG. 11 illustrates an embodiment of an electronic system including a semiconductor device."

For additional information on this patent application, see: JANG, Jae-June; KIM, Hyun-Ju; PARK, Seo-In. Semiconductor Device and Method of Fabricating the Same. Filed October 25, 2013 and posted July 3, 2014. Patent URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&u=%2Fnetahtml%2FPTO%2Fsearch-adv.html&r=6495&p=130&f=G&l=50&d=PG01&S1=20140626.PD.&OS=PD/20140626&RS=PD/20140626

Keywords for this news article include: Semiconductor, Samsung Electronics Co. Ltd..

Our reports deliver fact-based news of research and discoveries from around the world. Copyright 2014, NewsRx LLC


For more stories covering the world of technology, please see HispanicBusiness' Tech Channel



Source: Electronics Newsweekly


Story Tools






HispanicBusiness.com Facebook Linkedin Twitter RSS Feed Email Alerts & Newsletters