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Researchers Submit Patent Application, "3d Imaging with Multiple Irradiation Frequencies", for Approval

July 16, 2014



By a News Reporter-Staff News Editor at Electronics Newsweekly -- From Washington, D.C., VerticalNews journalists report that a patent application by the inventors Barakat, Farid (Austin, TX); Bruce, Victoria Jean (Austin, TX); Cao, Lihong (Austin, TX), filed on December 21, 2012, was made available online on July 3, 2014.

The patent's assignee is Advanced Micro Devices, Inc.

News editors obtained the following quote from the background information supplied by the inventors: "Semiconductor devices are used in the vast majority of electronic devices. To ensure devices function in their intended manner, it is desirable to accurately and precisely fabricate physical features having specific physical dimensions. During fabrication, process variations may result in semiconductor devices having physical features that deviate from their intended physical dimensions, thereby impairing performance of those devices. For failure analysis, it is desirable to accurately analyze physical features of a semiconductor device in a non-destructive manner. However, many existing non-destructive analysis tools lack the resolution necessary to accurately obtain measurements of physical features, particularly as device geometries continue decreasing in size."

As a supplement to the background information on this patent application, VerticalNews correspondents also obtained the inventors' summary information for this patent application: "A method is provided for imaging a semiconductor device using different irradiation frequencies and generating a composite three-dimensional image of the semiconductor device based on the respective radiation response obtained from the semiconductor device for the different irradiation frequencies. An exemplary method for imaging the semiconductor device involves irradiating the semiconductor device with a first frequency of electromagnetic radiation, obtaining a first radiation response from the semiconductor device in response to the first frequency of electromagnetic radiation, irradiating the semiconductor device with a second frequency of electromagnetic radiation, obtaining a second radiation response from the semiconductor device in response to the second frequency of electromagnetic radiation, and generating a composite image of the semiconductor device based at least in part on the first radiation response and the second radiation response. Based on the different radiation responses, the material composition of the semiconductor device may be determined and utilized to fuse or otherwise combine three-dimensional images generated based on the individual radiation responses. In this manner, variations in material boundaries between individual three-dimensional images are averaged or otherwise interpolated, resulting in a composite three-dimensional image that is more accurate than what would be achieved using only a single irradiation frequency.

"The above and other aspects may be carried out by an embodiment of an imaging device that includes a radiation source, a first target electrode, a second target electrode, a first collimation arrangement, and a second collimation arrangement. The radiation source emits source radiation, wherein the first target electrode to generates first radiation having a first frequency in response to the source radiation, the second target electrode generates second radiation having a second frequency in response to the source radiation, the first collimation arrangement directs the first radiation from the first target electrode towards a focal point, and the second collimation arrangement directs the second radiation towards the focal point.

"In some embodiments, an imaging system includes a display device, an imaging device, and a control module coupled to the display device and the imaging device. The imaging device irradiates a semiconductor device under test with a first frequency of electromagnetic radiation and also irradiates the semiconductor device with a second frequency of electromagnetic radiation. The control module obtains, from the imaging device, a first radiation response generated by the semiconductor device in response to the first frequency of electromagnetic radiation and a second radiation response generated by the semiconductor device in response to the second frequency of electromagnetic radiation, generates a three-dimensional image of the semiconductor device based on the first radiation response and the second radiation response, and presents the three-dimensional image on the display device.

"This summary is provided to introduce a selection of concepts in a simplified form that are further described below in the detailed description. This summary is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used as an aid in determining the scope of the claimed subject matter.

BRIEF DESCRIPTION OF THE DRAWINGS

"A more complete understanding of the subject matter may be derived by referring to the detailed description and claims when considered in conjunction with the following figures, wherein like reference numbers refer to similar elements throughout the figures.

"FIG. 1 is a block diagram of an imaging system in accordance with one or more embodiments;

"FIG. 2 is a flow diagram of an exemplary imaging process suitable for implementation by the imaging system of FIG. 1 in accordance with some embodiments;

"FIG. 3 is a block diagram of another imaging system suitable for implementing the imaging process of FIG. 2 in accordance with one or more embodiments; and

"FIG. 4 illustrates construction of a composite three-dimensional image in accordance with one or more embodiments of the imaging process of FIG. 2 in accordance with some embodiments."

For additional information on this patent application, see: Barakat, Farid; Bruce, Victoria Jean; Cao, Lihong. 3d Imaging with Multiple Irradiation Frequencies. Filed December 21, 2012 and posted July 3, 2014. Patent URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&u=%2Fnetahtml%2FPTO%2Fsearch-adv.html&r=4245&p=85&f=G&l=50&d=PG01&S1=20140626.PD.&OS=PD/20140626&RS=PD/20140626

Keywords for this news article include: Electronics, Electromagnet, Semiconductor, Advanced Micro Devices Inc..

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Source: Electronics Newsweekly


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