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Researchers from Chinese Academy of Science Provide Details of New Studies and Findings in the Area of Information Storage (Ion transport-related...

July 15, 2014



Researchers from Chinese Academy of Science Provide Details of New Studies and Findings in the Area of Information Storage (Ion transport-related resistive switching in film sandwich structures)

By a News Reporter-Staff News Editor at Information Technology Newsweekly -- Investigators discuss new findings in Information Storage. According to news reporting originating from Zhejiang, People's Republic of China, by VerticalNews correspondents, research stated, "Resistive switching memories based on ion transport and related electrochemical reactions have been extensively studied for years. To utilize the resistive switching memories for high-performance information storage applications, a thorough understanding of the key information of ion transport process, including the mobile ion species, the ion transport paths, as well as the electrochemical reaction behaviors of these ions should be provided for material and device optimization."

Our news editors obtained a quote from the research from the Chinese Academy of Science, "Moreover, ion transport is usually accompanied by processes of microstructure modification, phase transition, and energy band structure variation that lead to further modulation of other physical properties, e.g., magnetism, optical emission/absorbance, etc., in the resistive switching materials. Therefore, novel resistive switching memories that are controlled through additional means of magnetic or optical stimulus, or demonstrate extra functionalities beyond information storage, can be made possible via well-defined ion transportation in various switching materials and devices. In this contribution, the mechanism of ion transport and related resistive switching phenomena in thin film sandwich structures is discussed first, followed by a glance at the recent progress in the development of high-performance and multifunctional resistive switching memories."

According to the news editors, the research concluded: "A brief perspective of the ion transport-based resistive switching memories is addressed at the end of this review."

For more information on this research see: Ion transport-related resistive switching in film sandwich structures. Chinese Science Bulletin, 2014;59(20):2363-2382. Chinese Science Bulletin can be contacted at: Science Press, 16 Donghuangchenggen North St, Beijing 100717, Peoples R China. (World Scientific Publishing - www.worldscientific.com/; Chinese Science Bulletin - www.worldscinet.com/csb/csb.shtml)

The news editors report that additional information may be obtained by contacting X.J. Zhu, Chinese Academy Sci, Ningbo Inst Mat Technol & Engn, Zhejiang Prov Key Lab Magnet Mat & Applicat Techn, Ningbo 315201, Zhejiang, People's Republic of China. Additional authors for this research include J. Shang, G. Liu and R.W. Li.

Keywords for this news article include: Asia, Zhejiang, Chemistry, Electrochemical, Information Storage, Information Technology, People's Republic of China, Information and Data Storage

Our reports deliver fact-based news of research and discoveries from around the world. Copyright 2014, NewsRx LLC


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Source: Information Technology Newsweekly


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