News Column

Patent Issued for Semiconductor Power Module and Method of Manufacturing the Same

July 16, 2014



By a News Reporter-Staff News Editor at Electronics Newsweekly -- According to news reporting originating from Alexandria, Virginia, by VerticalNews journalists, a patent by the inventor Hanada, Toshio (Kyoto, JP), filed on August 2, 2013, was published online on July 1, 2014.

The assignee for this patent, patent number 8766421, is Rohm Co., Ltd. (Kyoto, JP).

Reporters obtained the following quote from the background information supplied by the inventors: "The present invention relates to a semiconductor power module and a method of manufacturing the same.

"A semiconductor power module is an apparatus loaded with a plurality of semiconductor power devices for obtaining an output from the semiconductor power devices electrically connected with one another. Such a semiconductor power module is employed for an inverter circuit constituting a driver circuit for driving an electric motor, for example. The electric motor is employed as a power source for an electric car (including a hybrid car), an electric train or an industrial robot, for example. The semiconductor power module is also applied to an inverter circuit converting power generated by a power generator (particularly a private power generator) such as a solar cell or a wind power generator to match with the power of a commercial power source.

"The semiconductor power devices loaded on the semiconductor power module are connected to an external terminal of the semiconductor power module through wires.

"For example, a semiconductor power module disclosed in FIG. 1 of Patent Document 1 (Japanese Unexamined Patent Publication No 2007-305962) includes a circuit board having a structure obtained by integrating a metal substrate electrode, an insulated substrate and a heat sink with one another, a plurality of SiC semiconductor power devices connected. onto the metal substrate electrode of the circuit board, a case fixed to the heat sink for storing the SiC semiconductor power devices, and an external electrode mounted on the case. The SiC semiconductor power devices and the external electrode are connected with one another through Al wires."

In addition to obtaining background information on this patent, VerticalNews editors also obtained the inventor's summary information for this patent: "The Al wires connected to the semiconductor power devices must feed high current operated by the semiconductor power devices. In general, therefore, a plurality of Al wires are bonded to each semiconductor power device.

"Even if a plurality of Al wires are bonded to each semiconductor power device, however, the bonding area between each Al wire and the semiconductor power device is so small that current concentrates on the junction between the Al wire and the semiconductor power device. The waveform of the current is disturbed due to the current concentration, to disadvantageously result in local heat generation in the semiconductor power device. While the heat generated in the semiconductor power device is partially released through the Al wire, the heat releasing effect is insufficient if the diameter of the Al wire is small.

"When the number of the Al wires connected to each semiconductor power device is increased thereby ensuring large bonding areas, a sufficient heat releasing effect may be attained. However, the pitch of the Al wires connected to the semiconductor power device is limited, and hence the heat releasing effect is desirably improved by another technique.

"Accordingly, a principal object of the present invention is to provide a semiconductor power module capable of leveling current flowing from a semiconductor power device and capable of efficiently releasing heat generated in the semiconductor power device and a method of manufacturing the same.

"Another object of the present invention is to provide a method of manufacturing a semiconductor power module, capable of simply manufacturing a semiconductor power module capable of leveling current flowing from a semiconductor power device and capable of efficiently releasing heat generated in the semiconductor power device with high quality.

"The foregoing and other objects, features and effects of the present invention will become more apparent from the following detailed description of the embodiments with reference to the attached drawings."

For more information, see this patent: Hanada, Toshio. Semiconductor Power Module and Method of Manufacturing the Same. U.S. Patent Number 8766421, filed August 2, 2013, and published online on July 1, 2014. Patent URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8766421.PN.&OS=PN/8766421RS=PN/8766421

Keywords for this news article include: Electronics, Circuit Board, Rohm Co. Ltd., Semiconductor.

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Source: Electronics Newsweekly


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