News Column

Patent Issued for Pixel Structure

July 16, 2014



By a News Reporter-Staff News Editor at Electronics Newsweekly -- According to news reporting originating from Alexandria, Virginia, by VerticalNews journalists, a patent by the inventors Liu, Chun-Yen (Hsinchu County, TW); Tseng, Cheng-Chieh (Hsinchu County, TW); Yeh, Chia-Yuan (Hsinchu, TW), filed on May 29, 2013, was published online on July 1, 2014.

The assignee for this patent, patent number 8766267, is Au Optronics Corporation (Hsinchu, TW).

Reporters obtained the following quote from the background information supplied by the inventors: "The present invention relates to a semiconductor device. More particularly, the present invention relates to a pixel structure.

"An organic light emitting device is a self-illuminating light emitting device. Displays adopting organic light emitting devices have no limitation in viewing angle, low fabrication cost, high responding speed (about 100 times faster than that of liquid crystals), low power consumption, application in portable devices, wide operation temperature range, and light weight. Moreover, these displays can be miniaturized as required by hardware apparatuses. Thus, the displays adopting organic light emitting devices have high potential in development and may become flat panel displays of the next generation.

"A pixel structure of the organic light emitting device in the display is usually driven by the cooperation of a plurality of thin film transistors (TFTs) and a capacitor. However, since the plurality of TFTs is used in the pixel circuit structure, the TFTs must have occupied a certain area in the pixel structure. The pixel circuit structure consequently has no extra space for disposing other components. Or, the pixel circuit structure can not be miniaturized easily and thus can not be applied in displays with high resolution."

In addition to obtaining background information on this patent, VerticalNews editors also obtained the inventors' summary information for this patent: "Accordingly, the present invention is directed to a pixel structure capable of reducing an area occupied by components of the pixel structure.

"The present invention provides a pixel structure comprising a semiconductor layer, a first insulating layer, a first conductive layer, a second insulating layer, a second conductive layer, a third insulating layer, a third conductive layer, and a pixel electrode. The semiconductor layer comprises at least one source region and at least one drain region. The first insulating layer covers the semiconductor layer. The first conductive layer is disposed on the first insulating layer and includes at least one gate. The second insulating layer covers the first conductive layer. The second conductive layer is disposed on the second insulating layer and includes at least one source electrode, at least one drain electrode and at least one bottom electrode, wherein the at least one source electrode and the at least one drain electrode are electrically connected to the at least one source region and the at least one drain region, and the at least one source region, the at least one source electrode, the at least one drain region, the at least one drain electrode and the at least one gate form at least one thin film transistor. The third insulating layer covers the second conductive layer. The third conductive layer is disposed on the third insulating layer and includes at least one top electrode, wherein the at least one top electrode of the third conductive layer and the at least one bottom electrode of the second conductive layer form at least one capacitor. The pixel electrode is electrically connected to the at least one thin film transistor.

"The present invention provides a pixel structure comprising a semiconductor layer, a first insulating layer, a first conductive layer, a second insulating layer, a second conductive layer, a third insulating layer, a third conductive layer, and a pixel electrode. The semiconductor layer comprises at least one source region, at least one drain region, at least one channel region and at least one first electrode. The first insulating layer covers the semiconductor layer. The first conductive layer is disposed on the first insulating layer and includes at least one gate and at least one second electrode, wherein the at least one gate is disposed above the at least one channel region, and the at least one second electrode is disposed above the at least one first electrode. The second insulating layer covers the first conductive layer. The second conductive layer is disposed on the second insulating layer and includes at least one third electrode located above the at least one second electrode, wherein the at least one first electrode of the semiconductor layer, the at least one second electrode of the first conductive layer, and the at least one third electrode of the second conductive layer form at least one capacitor. The third insulating layer covers the second conductive layer. The third conductive layer is disposed on the third insulating layer and includes at least one source electrode and at least one drain electrode, wherein the at least one source electrode and the at least one drain electrode are electrically connected to the at least one source region and the at least one drain region respectively, and the at least one source region, the at least one source electrode, the at least one drain region, the at least one drain electrode, the at least one channel and the at least one gate form at least one thin film transistor. The pixel electrode is electrically connected to the at least one thin film transistor.

"In light of the foregoing, in one embodiment of the present invention, the capacitor is formed with the second conductive layer and the third conductive layer, and therefore the capacitor can be disposed overlapping with the semiconductor layer, so as to educe an area occupied by components of the pixel structure. According to another embodiment of the present invention, the capacitor is formed with the semiconductor layer, the first conductive layer and the second conductive layer, and the area occupied by the capacitor can be reduced on the premise that a predetermined capacitance is maintained, such that an overall area of the pixel structure can also be reduced.

"In order to make the aforementioned and other features and advantages of the present invention more comprehensible, several embodiments accompanied with figures are described in detail below."

For more information, see this patent: Liu, Chun-Yen; Tseng, Cheng-Chieh; Yeh, Chia-Yuan. Pixel Structure. U.S. Patent Number 8766267, filed May 29, 2013, and published online on July 1, 2014. Patent URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8766267.PN.&OS=PN/8766267RS=PN/8766267

Keywords for this news article include: Electronics, Semiconductor, Au Optronics Corporation.

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Source: Electronics Newsweekly


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