Patent number 8766240 is assigned to
The following quote was obtained by the news editors from the background information supplied by the inventors: "Organic electronic devices, such as organic light-emitting devices (OLEDs), are vulnerable to degradation when exposed to water vapor or oxygen. A protective barrier coating over the OLED to reduce its exposure to water vapor or oxygen could help to improve the lifetime and performance of the device. Films of silicon oxide, silicon nitride, or aluminum oxide, which have been successfully used in food packaging, have been considered for use as barrier coatings for OLEDs. However, these inorganic films tend to contain microscopic defects which allow some diffusion of water vapor and oxygen through the film. In some cases, the defects open as cracks in the brittle film. While this level of water and oxygen diffusion may be acceptable for food products, it is not acceptable for OLEDs. To address these problems, multilayer barrier coatings that use alternating inorganic and polymer layers have been tested on OLEDs and found to have improved resistance to water vapor and oxygen penetration. But these multilayer coatings have the disadvantages of complexity and cost. Thus, there is a need for improved barrier coatings suitable for use in protecting OLEDs."
In addition to the background information obtained for this patent, NewsRx journalists also obtained the inventors' summary information for this patent: "According to an aspect of the present disclosure, a permeation barrier film structure for organic electronic devices is disclosed. The permeation barrier film structure has a hybrid permeation barrier composition and comprises one or more bilayers. Each of the one or more bilayers comprises a first region having a first composition corresponding to a first CF.sub.4--O.sub.2 Plasma Reactive Ion Etch Rate and a second region having a second composition corresponding to a second CF.sub.4--O.sub.2 Plasma Reactive Ion Etch Rate, wherein the second CF.sub.4--O.sub.2 Plasma Reactive Ion Etch Rate is greater than the first CF.sub.4--O.sub.2 Plasma Reactive Ion Etch Rate by a factor greater than 1.2 and preferably between 1.2 to 5. In one embodiment, the hybrid permeation barrier film is a homogeneous mixture of a polymeric material and a non-polymeric material, wherein the mixture is created from one precursor material. The density of the first region is higher than that of the second region as illustrated by their plasma reactive ion etch rates.
"According to another aspect of the present disclosure, each of the one or more bilayers comprises a first region having a CF.sub.4--O.sub.2 Plasma Reactive Ion Etch Rate less than 65 nm/min and a second region having a CF.sub.4--O.sub.2 Plasma Reactive Ion Etch Rate greater than 80 nm/min, where the CF.sub.4--O.sub.2 Plasma Reactive Ion Etch Rate is defined as the etch rate measured when etched using a CF.sub.4--O.sub.2 plasma reactive ion etch process which etches thermally grown SiO.sub.2 at 45 nm/min. The ratio of the thickness of the second region to the first region can be between 0.5 to 20."
URL and more information on this patent, see: Mandlik, Prashant; Silvernail, Jeffrey; Ma, Ruiqing. Permeation Barrier for Encapsulation of Devices and Substrates. U.S. Patent Number 8766240, filed
Keywords for this news article include: Chalcogens, Nanotechnology, Organic Electronic, Emerging Technologies,
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