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Reports Summarize Materials Science Study Results from Polyera Corporation (Solution-Processed Barium Salts as Charge Injection Layers for High...

August 5, 2014



Reports Summarize Materials Science Study Results from Polyera Corporation (Solution-Processed Barium Salts as Charge Injection Layers for High Performance N-Channel Organic Field-Effect Transistors)

By a News Reporter-Staff News Editor at Journal of Technology -- Investigators discuss new findings in Materials Science. According to news reporting out of Skokie, Illinois, by VerticalNews editors, research stated, "N-channel organic field-effect transistors (OFETs) have generally shown lower field-effect mobilities (mu(FET)) than their p-type counterparts. One of the reasons is the energetic misalignment between the work function (WF) of commonly used charge injection electrode, i.e. gold (Au), and the lowest unoccupied molecular orbital (LUMO) of n-channel electron-transporting organic semiconductors."

Our news journalists obtained a quote from the research from Polyera Corporation, "Here, we report barium salts as solution-processed interlayers, to improve the electron-injection and/or hole-blocking in top-gate/bottom-contact n-channel OFETs, based on poly{[N,N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-dithiophene)} (P(NDI2OD-T2)) and phenyl-C61-butyric acid methyl ester (PC61BM). Two different barium salts, barium hydroxide (Ba(OH)(2)) and barium chloride (Ba(Cl)(2)), are employed as the ultrathin interlayer (similar to 2 nm); and they effectively tune the WF of Au from 4.9 eV, to as low as 3.5 eV."

According to the news editors, the research concluded: "The resulting n-channel OFETs exhibit significantly improved mu(FET), approaching 2.6 cm(2)/(V s) and 0.1 cm(2)/(V s) for the best P(NDI2OD-T2) and PC61BM devices, respectively, with Ba(OH)(2) as interlayer."

For more information on this research see: Solution-Processed Barium Salts as Charge Injection Layers for High Performance N-Channel Organic Field-Effect Transistors. ACS Applied Materials & Interfaces, 2014;6(12):9614-9621. ACS Applied Materials & Interfaces can be contacted at: Amer Chemical Soc, 1155 16TH St, NW, Washington, DC 20036, USA. (American Chemical Society - www.acs.org; ACS Applied Materials & Interfaces - www.pubs.acs.org/journal/aamick)

Our news journalists report that additional information may be obtained by contacting N.K. Kim, Polyera Corp, Skokie, IL 60077, United States. Additional authors for this research include D. Khim, Y. Xu, S.H. Lee, M. Kang, J. Kim, A. Facchetti, Y.Y. Noh and D.Y. Kim.

Keywords for this news article include: Skokie, Illinois, United States, Materials Science, North and Central America

Our reports deliver fact-based news of research and discoveries from around the world. Copyright 2014, NewsRx LLC


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Source: Journal of Technology


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