News Column

Study Results from University of Artois in the Area of Optoelectronics Reported (Raman and Optical Studies of spray pyrolysed Sb2S3 thin films)

August 6, 2014

By a News Reporter-Staff News Editor at Electronics Newsweekly -- New research on Optoelectronics is the subject of a report. According to news reporting from Lens, France, by VerticalNews journalists, research stated, "Thin films of Sb2S3 have been prepared by spray pyrolysis technique. Thiourea (CS(NH2)(2)) and Antimony Trichloride (SbCl3) have been used as starting chemicals for the thin films preparation."

The news correspondents obtained a quote from the research from the University of Artois, "The film surface morphology has been analyzed using the AFM (Atomic Force Microscope) and revealed that crystallites of average size of 620 nm compose the films of Sb2S3. Raman vibration mode assignments confirmed the identification of the Sb2S3 phase for the prepared thin films and revealed that their Raman spectra are roughly dominated by stretching vibration modes nu(Sb-S)."

According to the news reporters, the research concluded: "The optical constants analysis of the prepared films gave 1.78 eV as a value of the optical band gap and confirmed the ionic character of the Sb2S3 material."

For more information on this research see: Raman and Optical Studies of spray pyrolysed Sb2S3 thin films. Journal of Optoelectronics and Advanced Materials, 2014;16(5-6):726-731. Journal of Optoelectronics and Advanced Materials can be contacted at: Natl Inst Optoelectronics, 1 Atomistilor St, PO Box Mg-5, Bucharest-Magurele 76900, Romania.

Our news journalists report that additional information may be obtained by contacting M. Medles, Univ Artois, Fac Jean Perrin, F-62307 Lens, France. Additional authors for this research include N. Benramdane, A. Bouzidi, K. Sahraoui, R. Miloua, R. Desfeux and C. Mathieu.

Keywords for this news article include: Lens, France, Europe, Optoelectronics

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Source: Electronics Newsweekly

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