Researchers from Alternative Energies and Atomic Energy Commission Detail Findings in Thin Solid Films (Impact of Sb doping on power consumption and retention reliability of GeS2 based conductive bridge random access memory)
By a News Reporter-Staff News Editor at Electronics Newsweekly -- Investigators discuss new findings in Thin Solid Films. According to news originating from Grenoble, France, by VerticalNews correspondents, research stated, "In this paper we present the impact of Sb doping of the GeS2 electrolyte in W/GeS2/Ag based conductive bridge random access memory (CBRAM) on the memory performance. In particular, the CBRAM resistance window, R-ON and R-OFF values versus programming current, power consumption and reliability are analyzed in depth."
Our news journalists obtained a quote from the research from Alternative Energies and Atomic Energy Commission, "We demonstrated that the Sb concentration governs the optimal operating conditions. In particular, high Sb doping allows low programming current operation (suitable for low power applications), while low Sb content improves the R-OFF/R-ON ratio (needed in particular for nonvolatile field-programmable gate array applications). Finally, we observed that the high temperature retention could be improved by increasing the Sb doping."
According to the news editors, the research concluded: "This result was interpreted by means of ab initio calculations, indicating that Sb reduces the dissolution rate of the Ag-based conductive filament in the electrolyte."
For more information on this research see: Impact of Sb doping on power consumption and retention reliability of GeS2 based conductive bridge random access memory. Thin Solid Films, 2014;563():15-19. Thin Solid Films can be contacted at: Elsevier Science Sa, PO Box 564, 1001 Lausanne, Switzerland. (Elsevier - www.elsevier.com; Thin Solid Films - www.elsevier.com/wps/product/cws_home/504106)
The news correspondents report that additional information may be obtained from J. Guy, CEA Leti, F-38054 Grenoble 9, France. Additional authors for this research include G. Molas, E. Vianello, C. Carabasse, P. Blaise, M. Bernard, E. Souchier, P. Francois, F. Aussenac, V. Delaye, F. Clermidy and B. De Salvo.
Keywords for this news article include: France, Europe, Grenoble, Electronics, Thin Solid Films, Random Access Memory
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