The assignee for this patent, patent number 8785902, is
Reporters obtained the following quote from the background information supplied by the inventors: "Exemplary embodiments of the present invention relate to a semiconductor device fabrication technology, and more particularly, to a resistive memory device using a resistance change in detecting data, such as a nonvolatile resistive random access memory (ReRAM) and a method for fabricating the same.
"Next generation memory devices which can replace a dynamic random access memory (DRAM) and a flash memory are being developed. One of such next generation memory devices is a resistive memory device using a resistive layer. Specifically, a resistive memory device uses a material whose resistance rapidly changes according to a bias applied thereto and thus can switch between at least two different resistance states.
"According to an example, a resistive memory device includes a resistive element and a selection element. The resistive element includes a lower electrode, a resistive layer, and an upper electrode, which are sequentially formed on a substrate. A filament current path is formed or removed within the resistive layer of the resistive element according to biases applied to the upper electrode and the lower electrode, and data is stored according to a resistance state which depends on the formation and removal of the filament current path.
"Therefore, the resistive memory device may have a large sensing current and may be sensitive to a resistance. Here, as the effective area of the resistive element becomes larger, a characteristic of the resistive element is degraded. Thus, methods for reducing the effective area of the resistive element are useful.
"Reducing an area of a resistive element is difficult. Further, in reducing the area of the resistive element, the area of the selection element may also be reduced and thus the resistance of the selection element may be increased. Therefore, an electric field and a current required upon a switching operation may not be appropriately supplied to the resistive element."
In addition to obtaining background information on this patent, VerticalNews editors also obtained the inventors' summary information for this patent: "An embodiment of the present invention is directed to a resistive memory device including an upper electrode a lower portion of which is narrower than an upper portion thereof.
"Another embodiment of the present invention is directed to a resistive memory device includes: a lower electrode formed on a substrate; a resistive layer formed on the lower electrode; and an upper electrode formed on the resistive layer, wherein a lower portion of the upper electrode is narrower than an upper portion of the upper electrode.
"In accordance with an embodiment of the present invention, a method for fabricating a resistive memory device includes: forming a lower electrode on a substrate; forming a sacrificial layer on the lower electrode; etching the sacrificial layer to form a trench having a lower portion narrower than an upper portion of the trench; forming a resistive layer in the trench; and forming an upper electrode by burying a conductive layer within the trench and over the resistive layer formed in the trench."
For more information, see this patent: Song, Seok-Pyo; Lee, Yu-Jin. Resistive Memory Device and Method for Fabricating the Same. U.S. Patent Number 8785902, filed
Keywords for this news article include: Electronics,
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