News Column

Patent Issued for Methods for Forming Fine Patterns of a Semiconductor Device

August 6, 2014



By a News Reporter-Staff News Editor at Electronics Newsweekly -- Samsung Electronics Co., Ltd. (Gyeonggi-do, KR) has been issued patent number 8785319, according to news reporting originating out of Alexandria, Virginia, by VerticalNews editors.

The patent's inventors are Park, Joon-Soo (Seongnam-si, KR); Yoon, Kukhan (Hwaseong-si, KR); Kim, Joon (Seoul, KR); Kim, Cheolhong (Youngin-si, KR); Nam, Seokwoo (Seongnam-si, KR).

This patent was filed on March 13, 2013 and was published online on July 22, 2014.

From the background information supplied by the inventors, news correspondents obtained the following quote: "Example embodiments of inventive concepts relate to methods of forming fine patterns of a semiconductor device and, more particularly, to methods of forming fine patterns arranged in zigzag form.

"Forming fine patterns is beneficial when manufacturing a highly integrated semiconductor device. The size of elements in the semiconductor device becomes as small as possible to integrate many elements in a narrow area. To achieve this, a pitch corresponding to a sum of a width of the pattern and a space between the patterns is reduced. Recently, as a design rule of the semiconductor device has rapidly reduced, it may be difficult to form patterns having a fine pitch due to a resolution limitation of a photolithography process used to form the fine patterns that are beneficial when manufacturing the semiconductor device."

Supplementing the background information on this patent, VerticalNews reporters also obtained the inventors' summary information for this patent: "Example embodiments of inventive concepts may provide methods of manufacturing highly integrated fine patterns.

"In one aspect, a method of forming fine patterns may include: forming first hard mask patterns extending in a first direction on a lower layer; forming second hard mask patterns filling gap regions between the first hard mask patterns; forming a first mask patterns extending in a second direction perpendicular to the first direction on the first hard mask patterns and the second hard mask patterns; etching the first hard mask patterns using the first mask patterns as etch masks to form first openings; forming second mask patterns filling the first openings and extending in the second direction; and etching the second hard mask patterns using the second mask patterns as etch masks to form second openings spaced apart from the first openings in a diagonal direction with respect to the first direction.

"In another aspect, a method of forming fine patterns may include: forming first hard mask patterns extending in a first direction on a lower layer; forming second hard mask patterns filling gap regions between the first hard mask patterns; forming first openings in each of the first hard mask patterns, a space between the first openings arranged in the first direction greater than a space between the first openings arranged in a second direction perpendicular to the first direction; forming second openings in each of the second hard mask patterns, the second openings spaced apart from the first openings in a diagonal direction with respect to the first direction; and transferring the first and second openings to the lower layer to form holes arranged in zigzag form."

For the URL and additional information on this patent, see: Park, Joon-Soo; Yoon, Kukhan; Kim, Joon; Kim, Cheolhong; Nam, Seokwoo. Methods for Forming Fine Patterns of a Semiconductor Device. U.S. Patent Number 8785319, filed March 13, 2013, and published online on July 22, 2014. Patent URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8785319.PN.&OS=PN/8785319RS=PN/8785319

Keywords for this news article include: Semiconductor, Samsung Electronics Co. Ltd..

Our reports deliver fact-based news of research and discoveries from around the world. Copyright 2014, NewsRx LLC


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Source: Electronics Newsweekly


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