News Column

New Nanorods Findings from University of California Reported (On the Plasmonic Photovoltaic)

August 6, 2014

By a News Reporter-Staff News Editor at Electronics Newsweekly -- Investigators publish new report on Nanorods. According to news originating from Santa Barbara, California, by VerticalNews correspondents, research stated, "The conversion of sunlight into electricity by photovoltaics is currently a mature science and the foundation of a lucrative industry. In conventional excitonic solar cells, electron-hole pairs are generated by light absorption in a semiconductor and separated by the 'built in' potential resulting from charge transfer accompanying Fermi-level equalization either at a p-n or a Schottky junction, followed by carrier collection at appropriate electrodes."

Our news journalists obtained a quote from the research from the University of California, "Here we report a stable, wholly plasmonic photovoltaic device in which photon absorption and carrier generation take place exclusively in the plasmonic metal. The field established at a metal-semiconductor Schottky junction separates charges. The negative carriers are high-energy (hot) electrons produced immediately following the plasmon's dephasing. Some of the carriers are energetic enough to clear the Schottky barrier or quantum mechanically tunnel through it, thereby producing the output photocurrent. Short circuit photocurrent densities in the range 70-120 mu A cm(-2) were obtained for simulated one-sun AM1.5 illumination with devices based on arrays of parallel gold nanorods, conformally coated with 10 nm TiO2 films and fashioned with a Ti metal collector. For the device with short circuit currents of 120 mu A cm(-2), the internal quantum efficiency is 2.75%, and its wavelength response tracks the absorption spectrum of the transverse plasmon of the gold nanorods indicating that the absorbed photon-to-electron conversion process resulted exclusively in the Au, with the TiO2 playing a negligible role in charge carrier production. Devices fabricated with 50 nm TiO2 layers had open-circuit voltages as high as 210 mV, short circuit current densities of 26 mu A cm(-2), and a fill factor of 0.3."

According to the news editors, the research concluded: "For these devices, the TiO2 contributed a very small but measurable fraction of the charge carriers."

For more information on this research see: On the Plasmonic Photovoltaic. ACS Nano, 2014;8(6):6066-6073. ACS Nano can be contacted at: Amer Chemical Soc, 1155 16TH St, NW, Washington, DC 20036, USA. (American Chemical Society -; ACS Nano -

The news correspondents report that additional information may be obtained from S. Mubeen, University of California, Dept. of Chem Engn, Santa Barbara, CA 93106, United States. Additional authors for this research include J. Lee, W.R. Lee, N. Singh, G.D. Stucky and M. Moskovits.

Keywords for this news article include: California, Electronics, Photovoltaic, Santa Barbara, United States, Semiconductor, Nanotechnology, Emerging Technologies, North and Central America

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Source: Electronics Newsweekly

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