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Data on Optoelectronics Reported by Researchers at Uludag University [Gaussian distribution of inhomogeneous Barrier Height in Au/n-GaP (100)...

August 6, 2014



Data on Optoelectronics Reported by Researchers at Uludag University [Gaussian distribution of inhomogeneous Barrier Height in Au/n-GaP (100) Schottky Barrier diodes]

By a News Reporter-Staff News Editor at Electronics Newsweekly -- Research findings on Optoelectronics are discussed in a new report. According to news reporting originating in Gorukle, Turkey, by VerticalNews journalists, research stated, "The current voltage (I-V) measurements of Au/n-GaP Schottky barrier diodes (SBD) were carried out in the temperature range of 80-375 K. The values of zero-bias barrier height (phi(B0)) and ideality factor (n) ranged from 0.29 eV and 3.85 (80K) to 0.82 eV and 1.16 (375K), respectively. Such behavior of phi(B0) and n is attributed to Schottky barrier inhomogeneities by assuming a Gaussian Distribution (GD) of barrier hights (BHs) at Au/n-GaP interface."

The news reporters obtained a quote from the research from Uludag University, "The phi(B0) vs q/(2kT) plot has been drawn to obtain evidence of a Gaussian distribution of the barrier heights,and values of phi(B0) = 0,97 eV and sigma(0) = 0.10 V for the mean barrier height and zero-bias standard deviation have been obtained from this plot, respectively. Thus a modified In (I-0/T-2) - q(2) sigma(2)(0) /2k(2)T(2)vs 1000/T plot has given mean barrier height phi(B0) and Richardson constant (A*) as 1.95 eV and 0.054 A cm(-2) K-2, respectively."

According to the news reporters, the research concluded: "The temperature dependence of the I-V characteristics of the Au/n-GaP Schottky diode have been successfully explained on the basis of thermionic emission (TE) mechanism with GD of the Schottky barrier heights (SBHs)."

For more information on this research see: Gaussian distribution of inhomogeneous Barrier Height in Au/n-GaP (100) Schottky Barrier diodes. Journal of Optoelectronics and Advanced Materials, 2014;16(5-6):606-611. Journal of Optoelectronics and Advanced Materials can be contacted at: Natl Inst Optoelectronics, 1 Atomistilor St, PO Box Mg-5, Bucharest-Magurele 76900, Romania.

Our news correspondents report that additional information may be obtained by contacting M. Ozer, Uludag University, Fac Sci & Arts, Dept. of Phys, TR-16059 Gorukle, Bursa, Turkey. Additional authors for this research include T. Guzel, A. Asimov and M. Ahmetoglu.

Keywords for this news article include: Turkey, Gorukle, Eurasia, Optoelectronics

Our reports deliver fact-based news of research and discoveries from around the world. Copyright 2014, NewsRx LLC


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Source: Electronics Newsweekly


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