News Column

"Plasma Chamber and Apparatus for Treating Substrate" in Patent Application Approval Process

July 31, 2014



By a News Reporter-Staff News Editor at Politics & Government Week -- A patent application by the inventors LEE, Jong Sik (Seongnam-si, KR); CHO, Jeonghee (Hwaseong-si, KR); KIM, Hyun Jun (Busan, KR); CHUNG, Chin Wook (Seoul, KR); HAN, Duksun (Seoul, KR), filed on December 27, 2013, was made available online on July 17, 2014, according to news reporting originating from Washington, D.C., by VerticalNews correspondents.

This patent application is assigned to Industry-University Cooperation Foundation Hanyang University.

The following quote was obtained by the news editors from the background information supplied by the inventors: "The present invention disclosed herein relates to a plasma chamber and an apparatus for treating a substrate.

"A process for manufacturing semiconductors, displays, solar cells, and the like includes a process for treating a substrate by using plasma. For example, in the semiconductor manufacturing process, an etching device used for a dry etching process and an ashing device used for an ashing process may include a chamber for generating plasma. A substrate may be etched or ashed by using the plasma generated in the chamber.

"In typical plasma chambers, a coil is wound around a side surface of a chamber, and then, time-varying current flows into the coil to induced electric fields within a chamber, thereby generating plasma. However, in the plasma chambers, the plasma generated in a central portion of the chamber may have a relatively high density, and the plasma generated in an edge portion of the chamber may have a relatively low density.

"That is, in the typical plasma chambers, plasma may be nonuniformly generated over an inner space of the chamber. As a result, the substrate may be differently plasma-treated on central and edge portions thereof to deteriorate yield in the substrate treating process."

In addition to the background information obtained for this patent application, VerticalNews journalists also obtained the inventors' summary information for this patent application: "The present invention provides a plasma chamber in which plasma is uniformly generated over an entire region thereof and a substrate treating apparatus.

"The present invention also provides a plasma chamber in which a substrate is uniformly treated over an entire area thereof to reduce a failure rate of the substrate to be treated by using plasma and a substrate treating apparatus.

"The present invention also provides a plasma chamber having improved process yield and a substrate treating apparatus.

"Embodiments of the inventive concept provide plasma chambers including: a housing in which a gas is injected to generate plasma; a first coil disposed on one surface of the housing; and a second coil disposed on the other surface of the housing.

"In some embodiments, the housing may have a pillar shape, the first coil may be disposed on a top surface of the housing, and the second coil may be disposed on a side surface of the housing.

"In other embodiments, the housing may have a shape in which a plurality of pillars having bottom areas different from each other are connected to each other, the first coil may be disposed on a side surface of a first pillar of the plurality of pillars, and a second coil may be disposed on a side surface of a second pillar of the plurality of pillars.

"In still other embodiments, the housing may have a shape in which a plurality of pillars having bottom areas different from each other are connected to each other, the first coil may be disposed on a side surface of a first pillar of the plurality of pillars, and a second coil may be disposed on a top surface of a second pillar of the plurality of pillars.

"In even other embodiments, the first pillar may have a bottom area less than that of the second pillar.

"In yet other embodiments, the plasma chambers may further include a third coil disposed on a top surface of the first pillar.

"In further embodiments, the plasma chambers may further include a fourth coil disposed on a side surface of the second pillar.

"In still further embodiments, the housing may have a shape in which a cone pyramid is connected between a plurality of pillars having bottom areas different from each other, the first coil may be disposed on a side surface of one pillar of the plurality of pillars, and the second coil may be disposed on a side surface of the cone pyramid.

"In even further embodiments, the plasma chamber may further include a fifth coil disposed on a side surface of the other pillar of the plurality of pillars.

"In yet further embodiments, one of the first and second coils may be wound around a core and disposed on a side surface of the housing.

"In much further embodiments, the first and second coils may be connected to an RF power source for providing an RF signal.

"In still much further embodiments, the first and second coils may be connected to the RF power source in parallel.

"In even much further embodiments, the plasma chambers may further include: a first variable capacitor connected to an input terminal of the first coil in series; and a second variable capacitor connected to an input terminal of the second coil in series.

"In yet much further embodiments, the plasma chambers may further include: a first capacitive device connected to a ground terminal of the first coil in series; and a second capacitive device connected to a ground terminal of the second coil in series.

"In even yet much further embodiments, impedance of the first capacitive device may be set to a half of that of the first coil, and Impedance of the second capacitive device may be set to a half of that of the second coil.

"In other embodiments of the inventive concept, substrate treating apparatuses include: a process unit providing a space in which a substrate is disposed to plasma-treat the substrate; and a plasma generation unit generating plasma from a gas to supply the generated plasma into the process unit, wherein the plasma generation unit includes: an RF power source for providing an RF signal a housing in which a gas is injected to generate plasma; a first coil disposed on one surface of the housing, the first coil receiving the RF signal to induce electromagnetic fields in the housing; and a second coil disposed on the other surface of the housing, the second coil receiving the RF signal to induce electromagnetic fields in the housing.

"In some embodiments, the housing may have a pillar shape, the first coil may be disposed on a top surface of the housing, and the second coil may be disposed on a side surface of the housing.

"In other embodiments, the housing may have a shape in which a plurality of pillars having bottom areas different from each other are connected to each other, the first coil may be disposed on a side surface of a first pillar of the plurality of pillars, and a second coil may be disposed on a side surface of a second pillar of the plurality of pillars.

"In still other embodiments, the housing may have a shape in which a plurality of pillars having bottom areas different from each other are connected to each other, the first coil may be disposed on a side surface of a first pillar of the plurality of pillars, and a second coil may be disposed on a top surface of a second pillar of the plurality of pillars.

"In even other embodiments, the first pillar may have a bottom area less than that of the second pillar.

"In yet other embodiments, the plasma generation unit may further include a third coil disposed on a top surface of the first pillar.

"In further embodiments, the plasma generation unit may further include a fourth coil disposed on a side surface of the second pillar.

"In still further embodiments, the housing may have a shape in which a cone pyramid is connected between a plurality of pillars having bottom areas different from each other, and the second coil may be disposed on a side surface of the cone pyramid.

"In even further embodiments, the plasma generation unit may further include a fifth coil disposed on a side surface of the other pillar of the plurality of pillars.

"In yet further embodiments, one of the first and second coils may be wound around a core and disposed on a side surface of the housing.

BRIEF DESCRIPTION OF THE DRAWINGS

"The accompanying drawings are included to provide a further understanding of the present invention, and are incorporated in and constitute a part of this specification. The drawings illustrate exemplary embodiments of the present invention and, together with the description, serve to explain principles of the present invention. In the drawings:

"FIG. 1 is a view of a substrate treating apparatus using a plasma generation unit according to an embodiment of the present invention;

"FIGS. 2 to 11 are perspective views of a plasma chamber according to various embodiments of the present invention;

"FIG. 12 is a view of a core disposed on a side surface of a housing according to an embodiment of the present invention;

"FIG. 13 is a view of the core around which a lead wire is wound according to an embodiment of the present invention;

"FIG. 14 is a circuit diagram of a plasma generation unit according to an embodiment of the present invention; and

"FIG. 15 is a circuit diagram of a plasma generation unit according to another embodiment of the present invention."

URL and more information on this patent application, see: LEE, Jong Sik; CHO, Jeonghee; KIM, Hyun Jun; CHUNG, Chin Wook; HAN, Duksun. Plasma Chamber and Apparatus for Treating Substrate. Filed December 27, 2013 and posted July 17, 2014. Patent URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&u=%2Fnetahtml%2FPTO%2Fsearch-adv.html&r=5548&p=111&f=G&l=50&d=PG01&S1=20140710.PD.&OS=PD/20140710&RS=PD/20140710

Keywords for this news article include: Industry-University Cooperation Foundation Hanyang University.

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Source: Politics & Government Week


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