Investigators from University of Paris Report New Data on Silicon (Electronic and structural properties of graphene-based metal-semiconducting heterostructures engineered by silicon intercalation)
By a News Reporter-Staff News Editor at Science Letter -- Researchers detail new data in Silicon. According to news reporting originating in Paris, France, by NewsRx journalists, research stated, "The initial decoupling of the (6 root 3 x 6 root 3)R30 degrees buffer layer also called zero layer graphene (ZLG) on 6H-SiC(00 0 1) by Si intercalation has been investigated by means of high resolution photoemission spectroscopy (HRPES) and microscopy imaging techniques. A combination of complementary techniques has shown that the annealing above 700 degrees C of amorphous Si deposited on ZLG leads to the diffusion of the silicon over the surface."
The news reporters obtained a quote from the research from the University of Paris, "Two competing processes are then observed. Part of the silicon contributes to a progressive decoupling of the ZLG from the substrate (partial decoupling) while the rest agglomerates at the surface to form oriented silicon clusters. After sequences of Si deposition, followed by annealing at 750 degrees C, complete decoupling is observed into quasi-free standing monolayer (ML) graphene. Investigation of the evolution of the C1s and Si2p core levels during the intermediate states shows that the appearance of the graphene contribution coincides with the creation of an extra SiC bulk component, indicating their electronic decoupling."
According to the news reporters, the research concluded: "At partial decoupling of the ZLG, we have the coexistence of structurally linked metal-semiconducting materials presenting mutual electronic interactions and composed of nanometric metal-semiconducting heterojunctions."
For more information on this research see: Electronic and structural properties of graphene-based metal-semiconducting heterostructures engineered by silicon intercalation. Carbon, 2014;76():27-39. Carbon can be contacted at: Pergamon-Elsevier Science Ltd, The Boulevard, Langford Lane, Kidlington, Oxford OX5 1GB, England. (Elsevier - www.elsevier.com; Carbon - www.elsevier.com/wps/product/cws_home/258)
Our news correspondents report that additional information may be obtained by contacting M.G. Silly, University of Paris, Unite Mixte Rech CNRS 7614, Lab Chim Phys Mat & Rayonnement, F-75231 Paris 05, France. Additional authors for this research include M. D'Angelo, A. Besson, Y.J. Dappe, S. Kubsky, G. Li, F. Nicolas, D. Pierucci and M. Thomasset (see also Silicon).
Keywords for this news article include: Paris, France, Europe, Engineering, Silicon
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