Researchers from University of Kentucky Report Recent Findings in Optical Research (Preparation and characteristics of vanadium oxide thin films by controlling the sputtering voltage)
By a News Reporter-Staff News Editor at Journal of Technology -- Current study results on Optical Research have been published. According to news reporting originating in Lexington, Kentucky, by VerticalNews journalists, research stated, "Influence of sputtering voltage on the deposition process and characteristics of vanadium oxide thin films prepared by reactive DC magnetron sputtering is investigated. The target surface cleaning is controlled by adjusting the sputtering voltage."
The news reporters obtained a quote from the research from the University of Kentucky, "During the sputtering process, the sputtering voltage increases faster with larger O-2 gas flow rate. The sputtering voltage is easy to be stable with larger sputtering voltage. The measured sputtering voltage is correlated to the ion induced secondary electron emission (ISEE) coefficient of the target material. The ISEE coefficient of the oxidized vanadium target surface is lower than the ISEE coefficient of the vanadium metal. The semiconductor to metal (S-M) phase transition temperature decreases with the sputtering voltage, leading to the lower the corresponding temperature of the maximum temperature coefficient of resistance (TCR)."
According to the news reporters, the research concluded: "By this way, O/V ratio, R, and TCR of VOx films can be controlled by adjusting the sputtering voltage."
For more information on this research see: Preparation and characteristics of vanadium oxide thin films by controlling the sputtering voltage. Optical Materials, 2014;36(8):1419-1423. Optical Materials can be contacted at: Elsevier Science Bv, PO Box 211, 1000 Ae Amsterdam, Netherlands. (Elsevier - www.elsevier.com; Optical Materials - www.elsevier.com/wps/product/cws_home/522512)
Our news correspondents report that additional information may be obtained by contacting X.B. Wei, University of Kentucky, Center Nanoscale Sci & Engn, Lexington, KY 40506, United States. Additional authors for this research include S.B. Li, J. Gou, X. Dong, X.H. Yang, W.Z. Li, T. Wang, Z.M. Wu, Y.D. Jiang and Z. Chen.
Keywords for this news article include: Kentucky, Lexington, United States, Optical Research, North and Central America
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