Our news editors obtained a quote from the research, "Nanocrystalline silicon films deposited onto a variety of substrates were doped to nominal boron densities in excess of 1020cm-3 and were annealed up to 1000 degrees C to promote boride precipitation. Thermoelectric properties were measured and compared with their microstructure. A concurrent increase of sigma and S with the carrier density was found only upon formation of an interphase."
According to the news editors, the research concluded: "Its dependency on the film microstructure and on the deposition and processing conditions will be discussed."
For more information on this research see: Enhancement of the power factor in two-phase silicon-boron nanocrystalline alloys. Physica Status Solidi A-Applications and Materials Science, 2014;211(6):1255-1258. Physica Status Solidi A-Applications and Materials Science can be contacted at:
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