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Researchers Submit Patent Application, "Thin Film Transistor and Method for Manufacturing the Same", for Approval

July 23, 2014



By a News Reporter-Staff News Editor at Electronics Newsweekly -- From Washington, D.C., VerticalNews journalists report that a patent application by the inventor KIM, Ki-Hyun (Yongin-City, KR), filed on August 29, 2013, was made available online on July 10, 2014.

No assignee for this patent application has been made.

News editors obtained the following quote from the background information supplied by the inventors: "This present invention generally relates to a thin film transistor and a method for manufacturing the same.

"In general, a thin film transistor configuring a semiconductor device has a structure in which several layers, such as an insulating layer, a semiconductor layer, a conductive layer, or the like, are stacked. However, since each of the layers is patterned so as to have a specific shape, step parts are created on a surface of the thin film transistor.

"The above information disclosed in this Related Art section is only for enhancement of understanding of the background of the invention and therefore it may contain information that does not form the prior art that is already known to a person of ordinary skill in the art."

As a supplement to the background information on this patent application, VerticalNews correspondents also obtained the inventor's summary information for this patent application: "An object of the present invention is to provide a thin film transistor capable of reducing step parts of the surface thereof and a method for manufacturing the same.

"In order to achieve the above mentioned object, according to one aspect of the present invention comprises: there is provided a thin film transistor comprising: a substrate; a first insulating layer disposed on the substrate and having a first hole; a second insulating layer disposed on the substrate and having a second hole; a gate insulating layer disposed between the first and second insulating layers; a gate electrode formed in the first hole; a source electrode and second drain electrode formed at both sides of an inner portion of the second hole; and an activated layer formed between the source electrode and the second drain electrode of the inner portion of the second hole.

"According to another aspect of the present invention, there is provided a method for manufacturing a thin film comprising: forming a first insulating layer on a substrate and then forming a first hole in the first insulating layer; forming a gate electrode in an inner portion of the first hole; forming a gate insulating layer and a second insulating layer on the first insulating layer including the gate electrode; forming a second hole in the second insulating layer and then forming a conductive layer in an inner portion of the second hole; forming a third hole in the conductive layer such that source and drain electrodes made of the conductive layer are formed; and forming an activated layer in an inner portion of the third hole.

"According to yet another aspect of the present invention, there is provided a method for manufacturing a thin film comprising: forming a second insulating layer on a substrate and then forming a second hole in the second insulating layer; forming a conductive layer in an inner portion of the second hole and then forming a third hole in the conductive layer such that source and drain electrodes made of the conductive layer are formed; forming an activated layer in an inner portion of the third hole; forming a gate insulating layer on the second insulating layer including the source and drain electrodes and the activated layer; forming a first insulating layer on the gate insulating layer and then forming a first hole in the insulating layer; and forming a gate electrode in an inner portion of the first hole.

BRIEF DESCRIPTION OF THE DRAWINGS

"A more complete appreciation of the invention, and many of the attendant advantages thereof, will be readily apparent as the same becomes better understood by reference to the following detailed description when considered in conjunction with the accompanying drawings, in which like reference symbols indicate the same or similar components, wherein:

"FIGS. 1 and 2 are cross-sectional views for explaining a thin film transistor according to an exemplary embodiment of the present invention.

"FIGS. 3A to 3F are cross-sectional views for explaining a method for manufacturing a thin film transistor according to an exemplary embodiment of the present invention.

"FIGS. 4A to 4E are cross-sectional views for explaining a method for manufacturing a thin film transistor according to an exemplary embodiment of the present invention.

"FIG. 5 is a cross-sectional view for explaining an organic light emitting display device using a thin film according to an exemplary embodiment of the present invention."

For additional information on this patent application, see: KIM, Ki-Hyun. Thin Film Transistor and Method for Manufacturing the Same. Filed August 29, 2013 and posted July 10, 2014. Patent URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&u=%2Fnetahtml%2FPTO%2Fsearch-adv.html&r=6287&p=126&f=G&l=50&d=PG01&S1=20140703.PD.&OS=PD/20140703&RS=PD/20140703

Keywords for this news article include: Patents, Electronics, Semiconductor.

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Source: Electronics Newsweekly


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