News Column

Researchers Submit Patent Application, "Electrostatic Discharge Protection Structure", for Approval

July 23, 2014



By a News Reporter-Staff News Editor at Electronics Newsweekly -- From Washington, D.C., VerticalNews journalists report that a patent application by the inventors WANG, Chang-Tzu (Taoyuan County, TW); CHEN, Yu-Chun (Hsinchu County, TW); TANG, Tien-Hao (Hsinchu City, TW), filed on December 28, 2012, was made available online on July 10, 2014.

The patent's assignee is United Microelectronics Corporation.

News editors obtained the following quote from the background information supplied by the inventors: "In the process of producing or using a semiconductor integrated circuit device, electrostatic discharge (ESD) may result in sudden flow of electricity. The sudden flow of electricity may cause damage to the semiconductor integrated circuit device or the functional circuit, and reduce the production efficiency and the product yield.

"For reducing the influence of the high ESD current on the semiconductor integrated circuit device, an electrostatic discharge protection structure is integrated into the semiconductor integrated circuit device. Generally, once the electrostatic discharge protection structure is triggered, the holding voltage of the electrostatic discharge protection structure in a snapback breakdown condition may be pulled down to a low voltage. If the holding voltage is lower than a high power supply voltage of the integrated circuit device, the high-voltage integrated circuit device is susceptible to the latchup-like danger in the real life application system.

"Therefore, there is a need of providing an electrostatic discharge protection structure to eliminate the above drawbacks."

As a supplement to the background information on this patent application, VerticalNews correspondents also obtained the inventors' summary information for this patent application: "In accordance with an aspect, the present invention provides an electrostatic discharge protection structure. The electrostatic discharge protection structure includes a semiconductor substrate, a first well region, a gate structure, a second well region, a second well region, a second conductive region, and a deep well region. The first well region is disposed in the semiconductor substrate, and contains first type conducting carriers. The gate structure is disposed over a surface of the first well region. The second well region is disposed within the first well region and located at a first side of the gate structure. The second well region contains second type conducting carriers. The first conductive region is disposed on the surface of the first well region, and arranged between the gate structure and the second well region, wherein the first conductive region contains the second type conducting carriers. The second conductive region is disposed on the surface of the first well region, and the located at a second side of the gate structure, wherein the second conductive region contains the second type conducting carriers. The deep well region is disposed under the second well region and the first conductive region, and contacted with the second well region. The deep well region is separated from the first conductive region by the first well region. The deep well region contains the second type conducting carriers. Preferably, the concentration of the second type conducting carriers of the deep well region may be lower than the concentration of second type conducting carriers of the second well region.

BRIEF DESCRIPTION OF THE DRAWINGS

"The above objects and advantages of the present invention will become more readily apparent to those ordinarily skilled in the art after reviewing the following detailed description and accompanying drawings, in which:

"FIG. 1A is a schematic cross-sectional view illustrating an electrostatic discharge protection structure according to a first embodiment of the present invention;

"FIG. 1B is a schematic top view illustrating the electrostatic discharge protection structure of FIG. 1A;

"FIG. 1C is a schematic top view illustrating a variation of the electrostatic discharge protection structure of FIG. 1A;

"FIG. 2A is a schematic cross-sectional view illustrating an electrostatic discharge protection structure according to a second embodiment of the present invention;

"FIG. 2B is a schematic top view illustrating the electrostatic discharge protection structure of FIG. 2A;

"FIG. 2C is a schematic top view illustrating a variation of the electrostatic discharge protection structure of FIG. 2A;

"FIG. 3A is a schematic cross-sectional view illustrating an electrostatic discharge protection structure according to a third embodiment of the present invention;

"FIG. 3B is a schematic top view illustrating the electrostatic discharge protection structure of FIG. 3A;

"FIG. 3C is a schematic top view illustrating a variation of the electrostatic discharge protection structure of FIG. 3A;

"FIG. 4A is a schematic cross-sectional view illustrating an electrostatic discharge protection structure according to a fourth embodiment of the present invention;

"FIG. 4B is a schematic top view illustrating the electrostatic discharge protection structure of FIG. 4A;

"FIG. 4C is a schematic top view illustrating a variation of the electrostatic discharge protection structure of FIG. 4A;

"FIG. 5A is a schematic cross-sectional view illustrating an electrostatic discharge protection structure according to a fifth embodiment of the present invention;

"FIG. 5B is a schematic top view illustrating the electrostatic discharge protection structure of FIG. 5A;

"FIG. 6A is a schematic cross-sectional view illustrating an electrostatic discharge protection structure according to a sixth embodiment of the present invention;

"FIG. 6B is a schematic top view illustrating the electrostatic discharge protection structure of FIG. 6A; and

"FIG. 7 schematically illustrates the relationships between the voltage and current of a conventional electrostatic discharge protection structure and of the electrostatic discharge protection structure of the first embodiment of present invention."

For additional information on this patent application, see: WANG, Chang-Tzu; CHEN, Yu-Chun; TANG, Tien-Hao. Electrostatic Discharge Protection Structure. Filed December 28, 2012 and posted July 10, 2014. Patent URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&u=%2Fnetahtml%2FPTO%2Fsearch-adv.html&r=6326&p=127&f=G&l=50&d=PG01&S1=20140703.PD.&OS=PD/20140703&RS=PD/20140703

Keywords for this news article include: Semiconductor, United Microelectronics Corporation.

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Source: Electronics Newsweekly


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