News Column

Patent Issued for Semiconductor Device and Method for Producing the Same

July 23, 2014



By a News Reporter-Staff News Editor at Electronics Newsweekly -- Fujitsu Semiconductor Limited (Yokohama, JP) has been issued patent number 8772847, according to news reporting originating out of Alexandria, Virginia, by VerticalNews editors.

The patent's inventor is Sashida, Naoya (Kuwana, JP).

This patent was filed on November 28, 2012 and was published online on July 8, 2014.

From the background information supplied by the inventors, news correspondents obtained the following quote: "Various types of semiconductor devices such as electrically erasable programmable read-only memories (EEPROMs) and ferroelectric random access memories (FeRAMs) are known as semiconductor devices from which data does not disappear even after a power supply is stopped.

"Among such semiconductor devices, EEPROMs store data by storing charge in a floating gate, and are widely used in the form of a flash memory. However, when EEPROMs are irradiated with radiation, the charge in the floating gate easily flows to the outside, and thus EEPROMs have low radiation resistance.

"On the other hand, FeRAMs store data not by utilizing stored charge but by making the direction of polarization of a ferroelectric film correspond to '0' or '1'. Accordingly, FeRAMs have higher resistance to radiation than the EEPROMs do.

"In the medical field, high-energy gamma rays are used for sterilizing medical appliances. Furthermore, devices used in nuclear power plants or outer space are also exposed to radiation having high energy, such as an electron beam or a neutron beam.

"By further enhancing the radiation resistance of FeRAMs, products that may be used under such high-energy radiation may be provided, and furthermore, a new market of FeRAMs may be developed.

"For example, Japanese Laid-open Patent Publication No. 05-343617 discloses a semiconductor memory device."

Supplementing the background information on this patent, VerticalNews reporters also obtained the inventor's summary information for this patent: "According to an aspect of the invention, an apparatus includes a semiconductor device includes a semiconductor substrate; a first insulating film that is formed over the semiconductor substrate; a capacitor that is formed over the first insulating film and is formed by sequentially stacking a lower electrode, a capacitor dielectric film, and an upper electrode; a second insulating film that is formed over the capacitor and has a hole including the entire region of the upper electrode in plan view; and a conductor plug that is formed in the hole and contains tungsten.

"The object and advantages of the invention will be realized and attained by means of the elements and combinations particularly pointed out in the claims.

"It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are not restrictive of the invention, as claimed."

For the URL and additional information on this patent, see: Sashida, Naoya. Semiconductor Device and Method for Producing the Same. U.S. Patent Number 8772847, filed November 28, 2012, and published online on July 8, 2014. Patent URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8772847.PN.&OS=PN/8772847RS=PN/8772847

Keywords for this news article include: Electronics, Fujitsu Semiconductor Limited.

Our reports deliver fact-based news of research and discoveries from around the world. Copyright 2014, NewsRx LLC


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Source: Electronics Newsweekly


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