News Column

Patent Issued for Nonvolatile Memory Devices Including Common Source

July 23, 2014



By a News Reporter-Staff News Editor at Electronics Newsweekly -- According to news reporting originating from Alexandria, Virginia, by VerticalNews journalists, a patent by the inventors Kim, Hong-Soo (Gyeonggi-do, KR); Kim, Keon-Soo (Gyeonggi-do, KR), filed on December 4, 2008, was published online on July 8, 2014.

The assignee for this patent, patent number 8772852, is Samsung Electronics Co., Ltd. (KR).

Reporters obtained the following quote from the background information supplied by the inventors: "Exemplary embodiments disclosed herein relates to a semiconductor device, and more particularly, to a nonvolatile memory device including a common source.

"Nonvolatile memory devices maintain stored data even when an external power supply is interrupted. Nonvolatile memory devices may include a MASK ROM device, a FRAM device, an EEPROM device, a phase change memory device, a magnetic memory device and/or a flash memory device. The MASK ROM device may be manufactured by coding data during a manufacturing process. Thus, it may be impossible to change data stored in the MASK ROM device. The FRAM device may use a ferroelectric as an element storing data and the phase change memory device may use a phase change material having two stable states as an element storing data. The magnetic memory device may include a data storing element using magnetic moment. The flash memory device may include a charge storing element which is electrically isolated.

"A NAND-type flash memory device among the flash memory devices may be highly integrated. Therefore, the NAND-type flash memory device is in the limelight as a mass storage device. Recently, a study of replacing a hard disc by a NAND-type flash memory device has been actively performed.

"As a semiconductor industry is developed to a high degree, a nonvolatile memory device is more highly integrated. Thus, it becomes difficult more and more to manufacture a nonvolatile memory device. For instance, a margin of a manufacturing process is reduced and new defects occur to deteriorate a characteristic of a nonvolatile memory device. A lot of studies for overcoming these difficulties have been performing."

In addition to obtaining background information on this patent, VerticalNews editors also obtained the inventors' summary information for this patent: "Some exemplary embodiments provide a nonvolatile memory device. The nonvolatile memory device may include a device isolation pattern formed in a substrate, the device isolation pattern defining a plurality of first active regions which extends in parallel to each other along a first direction and a second active region which extends along a second direction perpendicular to the first direction and crosses the plurality of the first active regions; a common source formed in the second active region and extends along the second direction; a plurality of common drains formed in the plurality of the first active regions, respectively; a first selection line, a plurality of word lines and a second selection line crossing the first active regions disposed between the common source and the common drains in parallel to each other; and a source conductive line disposed on the second active region, the source conductive line extending along the second direction and being electrically connected to the common source."

For more information, see this patent: Kim, Hong-Soo; Kim, Keon-Soo. Nonvolatile Memory Devices Including Common Source. U.S. Patent Number 8772852, filed December 4, 2008, and published online on July 8, 2014. Patent URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8772852.PN.&OS=PN/8772852RS=PN/8772852

Keywords for this news article include: Semiconductor, Samsung Electronics Co. Ltd..

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Source: Electronics Newsweekly


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