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Patent Issued for Methods of Forming Metal Oxide Nanostructures, and Nanostructures

July 23, 2014



By a News Reporter-Staff News Editor at Journal of Engineering -- International Business Machines Corporation (Armonk, NY) has been issued patent number 8771632, according to news reporting originating out of Alexandria, Virginia, by VerticalNews editors.

The patent's inventors are Kim, Ho-Cheol (San Jose, CA); Miller, Robert D. (San Jose, CA); Park, Oun Ho (Portland, OR).

This patent was filed on August 10, 2012 and was published online on July 8, 2014.

From the background information supplied by the inventors, news correspondents obtained the following quote: "The present disclosure is generally related to methods of forming metal oxide nanostructures and nanostructures thereof, in particular, titania nanostructures.

"Titania is a well-know material with a broad range of applications including photonic crystals, photocatalysts, and photovoltaic cells. While several methods are known for nanostructuring titania, including thermal imprinting, many challenges remain mainly due to the properties of commonly-used sol-gel type titania precursors. The sol-gel type titania precursors are formed at low pH (approximately 1), are generally highly reactive and moisture sensitive, and form gels. They are often diluted in organic solvents during the sol-gel reaction to mitigate gelation, which causes large volume shrinkages during the nanostructuring process. Further, they are usually highly viscous and require high pressure for the nanostructuring process. Prior work directed toward thermal imprinting titania nanostructures used sol-gel type precursors [C. Goh, K. M. Coakley, M. D. McGehee, Nano Lett. 5, 1545 (2005), P. Yang, T. Deng, D. Zhao, P. Feng, D. Pine, B. F. Chmelka, G. M. Whitesides, G. D. Stucky, Science, 282, 2244, (1998)] or a mixture of titania colloidal particles and polymers [M. Wang, H.-G. Braun, and E. Meyer, Chem. Mater. 14, 4812 (2002)]."

Supplementing the background information on this patent, VerticalNews reporters also obtained the inventors' summary information for this patent: "Preferred aspects of the present invention are methods that employ a metal oxide material that has optimal properties for the process, such as low viscosity, controlled reactivity, UV-curability, and structural stability during calcination.

"In one aspect, a method of forming a metal oxide nanostructure comprises disposing a chelated oligomeric metal oxide precursor on a solvent-soluble template to form a first structure comprising a deformable chelated oligomeric metal oxide precursor layer; setting the deformable chelated oligomeric metal oxide precursor layer to form a second structure comprising a set metal oxide precursor layer; dissolving the solvent-soluble template with a solvent to form a third structure comprising the set metal oxide precursor layer; and thermally treating the third structure to form the metal oxide nanostructure.

"In another aspect, a method of forming a metal oxide nanostructure comprises disposing a chelated oligomeric metal oxide precursor on a solvent-soluble template to form a first structure comprising a chelated oligomeric metal oxide precursor layer having an exposed surface; bonding a substrate to an exposed surface of the chelated oligomeric metal oxide precursor layer to form a second structure comprising a chelated oligomeric metal oxide precursor layer; setting the chelated oligomeric metal oxide precursor layer of the second structure to form a third structure comprising a set metal oxide precursor layer; dissolving the solvent-soluble template with a solvent to form a fourth structure comprising the set metal oxide precursor layer; and thermally treating the fourth structure to form a fifth structure comprising a metal oxide nanostructure bonded to the substrate.

"In another aspect, a method of forming a metal oxide nanostructure comprises disposing a chelated oligomeric metal oxide precursor on a substrate to form a first structure comprising a deformable chelated oligomeric metal oxide precursor layer; contacting a solvent-soluble template to the deformable chelated oligomeric metal oxide precursor layer to form a second structure comprising a shaped chelated oligomeric metal oxide precursor layer; setting the shaped chelated oligomeric metal oxide precursor layer of the second structure to form a third structure comprising a set metal oxide precursor layer; dissolving the solvent-soluble template with a solvent to form a fourth structure comprising the set metal oxide precursor layer; and thermally treating the fourth structure to form the metal oxide nanostructure.

"Also disclosed are metal oxide nanostructures derived from a chelated oligomeric metal oxide precursor."

For the URL and additional information on this patent, see: Kim, Ho-Cheol; Miller, Robert D.; Park, Oun Ho. Methods of Forming Metal Oxide Nanostructures, and Nanostructures. U.S. Patent Number 8771632, filed August 10, 2012, and published online on July 8, 2014. Patent URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8771632.PN.&OS=PN/8771632RS=PN/8771632

Keywords for this news article include: Nanostructural, Nanostructures, Nanotechnology, Emerging Technologies, International Business Machines Corporation.

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Source: Journal of Engineering


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