News Column

Patent Application Titled "Nanopore Sensor Device" Published Online

July 22, 2014



By a News Reporter-Staff News Editor at Life Science Weekly -- According to news reporting originating from Washington, D.C., by NewsRx journalists, a patent application by the inventors Chang, Josephine B. (Mahopac, NY); Guillorn, Michael A. (Yorktown Heights, NY); Joseph, Eric A. (White Plains, NY); Papa Rao, Satyavolu S. (Poughkeepsie, NY), filed on January 3, 2013, was made available online on July 10, 2014 (see also International Business Machines Corporation).

The assignee for this patent application is International Business Machines Corporation.

Reporters obtained the following quote from the background information supplied by the inventors: "The present disclosure relates to a nanopore sensor device, and more particularly to a nanopore sensor device configured to determine electrical properties of a nanoscale string such as deoxyribonucleic acid (DNA) along a lengthwise direction, and a method of manufacturing the same.

"Determination of electrical properties of a nanoscale string is useful in determining molecular structures of the nanoscale string. For example, determination of electrical properties of a DNA string can provide information on the sequence of the molecules within the DNA string, and enable decoding of the DNA sequence within the DNA string. A device is desired that can provide direct reading of electrical properties of the molecules within a nanoscale string along the lengthwise direction."

In addition to obtaining background information on this patent application, NewsRx editors also obtained the inventors' summary information for this patent application: "A nanoscale sensor device can be fabricated by providing a template structure on a first dielectric material layer. The template structure includes a center portion and two funnel shaped portions attached to the center portion and having a gradually increasing width with distance from the center portion. A pair of electrode plates for applying an electrical field perpendicular to a lengthwise direction of a nanoscale string can be provided by directional deposition and patterning of a conductive material on sidewalls of the template structure. A cluster of electrode pairs can be provided by forming an electrode line straddling the center portion, forming a dielectric spacer around the electrode line, forming a conformal conductive layer, and patterning the conductive layer. Remaining portions of the conformal conductive layer constitute peripheral electrodes laterally spaced from the electrode line by a same distance along the lengthwise direction of the template structure. After deposition of a second dielectric material layer that encapsulates the template structure, the template structure is removed to provide a cavity that passes through the pair of electrode plates, the electrode line, and the peripheral electrodes. A nanoscale string can be electrically characterized while passing through the cavity employing the various electrodes.

"According to an aspect of the present disclosure, a method of forming a sensor structure is provided. A template structure is formed on a first dielectric material layer. An electrode line straddling the template structure is formed. A second dielectric material layer is formed over the template structure. The template structure is removed selective to the first and second dielectric material layers to form a cavity. A sensor structure including the cavity and at least the electrode line is thus formed.

"According to another aspect of the present disclosure, a sensor structure includes a first dielectric material layer and a second dielectric material layer in contact with each other at a planar interface. A cavity is embedded within the first dielectric material layer and the second dielectric material layer. The sensor structure further includes an electrode line embedded within the second dielectric material layer and straddling the cavity. First portions of the electrode line are in contact with a surface of the first dielectric material layer, and a second portion of the electrode line that is not in contact with the first dielectric material layer is spaced from a plane including the interface by a uniform distance.

BRIEF DESCRIPTION OF SEVERAL VIEWS OF THE DRAWINGS

"FIG. 1A is a top-down view of an exemplary structure including a substrate, a first dielectric material layer, and a sacrificial material layer according to an embodiment of the present disclosure.

"FIG. 1B is a vertical cross-sectional view of the exemplary structure along the vertical plane B-B' of FIG. 1A.

"FIG. 2A is a top-down view of the exemplary structure after patterning the sacrificial material into a template structure according to an embodiment of the present disclosure.

"FIG. 2B is a vertical cross-sectional view of the exemplary structure along the vertical plane B-B' of FIG. 2A.

"FIG. 3A is a top-down view of a selected portion of the exemplary structure after formation of a pair of electrode plates on sidewalls of the sacrificial template structure according to an embodiment of the present disclosure.

"FIG. 3B is a vertical cross-sectional view of the selected portion of the exemplary structure along the vertical plane B-B' of FIG. 3A.

"FIG. 3C is a vertical cross-sectional view of the selected portion of the exemplary structure along the vertical plane C-C' of FIG. 3A.

"FIG. 3D is a vertical cross-sectional view of the selected portion of the exemplary structure along the vertical plane D-D' of FIG. 3A.

"FIG. 3E is a vertical cross-sectional view of the selected portion of the exemplary structure along the vertical plane E-E' of FIG. 3A.

"FIG. 3F is a vertical cross-sectional view of the selected portion of the exemplary structure along the vertical plane F-F' of FIG. 3A.

"FIG. 4A is a top-down view of the selected portion of the exemplary structure after deposition and planarization of a dielectric masking material layer and removal of a conductive material portion according to an embodiment of the present disclosure.

"FIG. 4B is a vertical cross-sectional view of the selected portion of the exemplary structure along the vertical plane B-B' of FIG. 4A.

"FIG. 4C is a vertical cross-sectional view of the selected portion of the exemplary structure along the vertical plane C-C' of FIG. 4A.

"FIG. 4D is a vertical cross-sectional view of the selected portion of the exemplary structure along the vertical plane D-D' of FIG. 4A.

"FIG. 4E is a vertical cross-sectional view of the selected portion of the exemplary structure along the vertical plane E-E' of FIG. 4A.

"FIG. 4F is a vertical cross-sectional view of the selected portion of the exemplary structure along the vertical plane F-F' of FIG. 4A.

"FIG. 5A is a top-down view of the selected portion of the exemplary structure after patterning of the dielectric masking material layer according to an embodiment of the present disclosure.

"FIG. 5B is a vertical cross-sectional view of the selected portion of the exemplary structure along the vertical plane B-B' of FIG. 5A.

"FIG. 5C is a vertical cross-sectional view of the selected portion of the exemplary structure along the vertical plane C-C' of FIG. 5A.

"FIG. 5D is a vertical cross-sectional view of the selected portion of the exemplary structure along the vertical plane D-D' of FIG. 5A.

"FIG. 5E is a vertical cross-sectional view of the selected portion of the exemplary structure along the vertical plane E-E' of FIG. 5A.

"FIG. 5F is a vertical cross-sectional view of the selected portion of the exemplary structure along the vertical plane F-F' of FIG. 5A.

"FIG. 6A is a top-down view of the selected portion of the exemplary structure after formation of an electrode line straddling the sacrificial template structure according to an embodiment of the present disclosure.

"FIG. 6B is a vertical cross-sectional view of the selected portion of the exemplary structure along the vertical plane B-B' of FIG. 6A.

"FIG. 6C is a vertical cross-sectional view of the selected portion of the exemplary structure along the vertical plane C-C' of FIG. 6A.

"FIG. 6D is a vertical cross-sectional view of the selected portion of the exemplary structure along the vertical plane D-D' of FIG. 6A.

"FIG. 6E is a vertical cross-sectional view of the selected portion of the exemplary structure along the vertical plane E-E' of FIG. 6A.

"FIG. 6F is a vertical cross-sectional view of the selected portion of the exemplary structure along the vertical plane F-F' of FIG. 6A.

"FIG. 7A is a top-down view of the selected portion of the exemplary structure after formation of a dielectric spacer around the electrode line according to an embodiment of the present disclosure.

"FIG. 7B is a vertical cross-sectional view of the selected portion of the exemplary structure along the vertical plane B-B' of FIG. 7A.

"FIG. 7C is a vertical cross-sectional view of the selected portion of the exemplary structure along the vertical plane C-C' of FIG. 7A.

"FIG. 7D is a vertical cross-sectional view of the selected portion of the exemplary structure along the vertical plane D-D' of FIG. 7A.

"FIG. 7E is a vertical cross-sectional view of the selected portion of the exemplary structure along the vertical plane E-E' of FIG. 7A.

"FIG. 7F is a vertical cross-sectional view of the selected portion of the exemplary structure along the vertical plane F-F' of FIG. 7A.

"FIG. 8A is a top-down view of the selected portion of the exemplary structure after deposition of a conformal conductive layer on the dielectric spacer and the first dielectric material layer according to an embodiment of the present disclosure.

"FIG. 8B is a vertical cross-sectional view of the selected portion of the exemplary structure along the vertical plane B-B' of FIG. 8A.

"FIG. 8C is a vertical cross-sectional view of the selected portion of the exemplary structure along the vertical plane C-C' of FIG. 8A.

"FIG. 8D is a vertical cross-sectional view of the selected portion of the exemplary structure along the vertical plane D-D' of FIG. 8A.

"FIG. 8E is a vertical cross-sectional view of the selected portion of the exemplary structure along the vertical plane E-E' of FIG. 8A.

"FIG. 8F is a vertical cross-sectional view of the selected portion of the exemplary structure along the vertical plane F-F' of FIG. 8A.

"FIG. 9A is a top-down view of the selected portion of the exemplary structure after application and patterning of a photoresist layer and an anisotropic etch according to an embodiment of the present disclosure.

"FIG. 9B is a vertical cross-sectional view of the selected portion of the exemplary structure along the vertical plane B-B' of FIG. 9A.

"FIG. 9C is a vertical cross-sectional view of the selected portion of the exemplary structure along the vertical plane C-C' of FIG. 9A.

"FIG. 9D is a vertical cross-sectional view of the selected portion of the exemplary structure along the vertical plane D-D' of FIG. 9A.

"FIG. 9E is a vertical cross-sectional view of the selected portion of the exemplary structure along the vertical plane E-E' of FIG. 9A.

"FIG. 9F is a vertical cross-sectional view of the selected portion of the exemplary structure along the vertical plane F-F' of FIG. 9A.

"FIG. 10A is a top-down view of the selected portion of the exemplary structure after formation of a second dielectric material layer over the template structure according to an embodiment of the present disclosure.

"FIG. 10B is a vertical cross-sectional view of the selected portion of the exemplary structure along the vertical plane B-B' of FIG. 10A.

"FIG. 10C is a vertical cross-sectional view of the selected portion of the exemplary structure along the vertical plane C-C' of FIG. 10A.

"FIG. 10D is a vertical cross-sectional view of the selected portion of the exemplary structure along the vertical plane D-D' of FIG. 10A.

"FIG. 10E is a vertical cross-sectional view of the selected portion of the exemplary structure along the vertical plane E-E' of FIG. 10A.

"FIG. 1OF is a vertical cross-sectional view of the selected portion of the exemplary structure along the vertical plane F-F' of FIG. 10A.

"FIG. 11A is a top-down view of the selected portion of the exemplary structure after physically exposing a top surface of a remaining portion of the conformal conductive layer according to an embodiment of the present disclosure.

"FIG. 11B is a vertical cross-sectional view of the selected portion of the exemplary structure along the vertical plane B-B' of FIG. 11A.

"FIG. 11C is a vertical cross-sectional view of the selected portion of the exemplary structure along the vertical plane C-C' of FIG. 11A.

"FIG. 11D is a vertical cross-sectional view of the selected portion of the exemplary structure along the vertical plane D-D' of FIG. 11A.

"FIG. 11E is a vertical cross-sectional view of the selected portion of the exemplary structure along the vertical plane E-E' of FIG. 11A.

"FIG. 11F is a vertical cross-sectional view of the selected portion of the exemplary structure along the vertical plane F-F' of FIG. 11A.

"FIG. 12A is a top-down view of the selected portion of the exemplary structure after formation of a pair of peripheral electrodes according to an embodiment of the present disclosure.

"FIG. 12B is a vertical cross-sectional view of the selected portion of the exemplary structure along the vertical plane B-B' of FIG. 12A.

"FIG. 12C is a vertical cross-sectional view of the selected portion of the exemplary structure along the vertical plane C-C' of FIG. 12A.

"FIG. 12D is a vertical cross-sectional view of the selected portion of the exemplary structure along the vertical plane D-D' of FIG. 12A.

"FIG. 12E is a vertical cross-sectional view of the selected portion of the exemplary structure along the vertical plane E-E' of FIG. 12A.

"FIG. 12F is a vertical cross-sectional view of the selected portion of the exemplary structure along the vertical plane F-F' of FIG. 12A.

"FIG. 13A is a top-down view of the selected portion of the exemplary structure after formation of contact via structures through the second dielectric material layer according to an embodiment of the present disclosure.

"FIG. 13B is a vertical cross-sectional view of the selected portion of the exemplary structure along the vertical plane B-B' of FIG. 13A.

"FIG. 13C is a vertical cross-sectional view of the selected portion of the exemplary structure along the vertical plane C-C' of FIG. 13A.

"FIG. 13D is a vertical cross-sectional view of the selected portion of the exemplary structure along the vertical plane D-D' of FIG. 13A.

"FIG. 13E is a vertical cross-sectional view of the selected portion of the exemplary structure along the vertical plane E-E' of FIG. 13A.

"FIG. 13F is a vertical cross-sectional view of the selected portion of the exemplary structure along the vertical plane F-F' of FIG. 13A.

"FIG. 14A is a top-down view of the exemplary structure after formation of via cavities through the second dielectric material layer according to an embodiment of the present disclosure.

"FIG. 14B is a vertical cross-sectional view of the exemplary structure along the vertical plane B-B' of FIG. 14A.

"FIG. 15A is a top-down view of the exemplary structure after removal of the template structure to form a cavity according to an embodiment of the present disclosure.

"FIG. 15B is a vertical cross-sectional view of the exemplary structure along the vertical plane B-B' of FIG. 15A."

For more information, see this patent application: Chang, Josephine B.; Guillorn, Michael A.; Joseph, Eric A.; Papa Rao, Satyavolu S. Nanopore Sensor Device. Filed January 3, 2013 and posted July 10, 2014. Patent URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&u=%2Fnetahtml%2FPTO%2Fsearch-adv.html&r=6255&p=126&f=G&l=50&d=PG01&S1=20140703.PD.&OS=PD/20140703&RS=PD/20140703

Keywords for this news article include: Nanoscale, DNA Research, Nanotechnology, Emerging Technologies, International Business Machines Corporation.

Our reports deliver fact-based news of research and discoveries from around the world. Copyright 2014, NewsRx LLC


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Source: Life Science Weekly


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