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Patent Application Titled "Method of Programming Data into Nonvolatile Memory and Method of Reading Data from Nonvolatile Memory" Published Online

July 23, 2014



By a News Reporter-Staff News Editor at Electronics Newsweekly -- According to news reporting originating from Washington, D.C., by VerticalNews journalists, a patent application by the inventors CHO, Kyounglae (Yongin-si, KR); MOON, Kui-Yon (Hwaseong-si, KR); KANG, Younggyu (Yongin-si, KR); KONG, Jaephil (Seoul, KR), filed on December 23, 2013, was made available online on July 10, 2014.

The assignee for this patent application is Samsung Electronics Co., Ltd.

Reporters obtained the following quote from the background information supplied by the inventors: "Some example embodiments of inventive concepts described herein relate to a semiconductor memory, and more particularly, relate to a program method capable of programming data into a nonvolatile memory and/or a read method capable of reading data from the nonvolatile memory.

"A semiconductor memory device is a memory device fabricated using semiconductors such as silicon (Si), germanium (Ge), gallium arsenide (GaAs), indium phosphide (InP), and the like. Semiconductor memory devices are classified into volatile memory devices and nonvolatile memory devices.

"The volatile memory devices may lose stored contents at power-off. The volatile memory devices include a static RAM (SRAM), a dynamic RAM (DRAM), a synchronous DRAM (SDRAM), and the like. The nonvolatile memory devices may retain stored contents even at power-off. The nonvolatile memory devices include a read only memory (ROM), a programmable ROM (PROM), an electrically programmable ROM (EPROM), an electrically erasable and programmable ROM (EEPROM), a flash memory device, a phase-change RAM (PRAM), a magnetic RAM (MRAM), a resistive RAM (RRAM), a ferroelectric RAM (FRAM), and the like.

"A semiconductor memory may store user data generated by a user. The semiconductor memory may further store metadata. The metadata may be data needed to manage the semiconductor memory. The metadata may be generated by the semiconductor memory. Alternatively, a controller of controlling the semiconductor memory may generate the metadata, and the metadata may be stored at the semiconductor memory. Since the metadata is data necessary to manage the semiconductor memory, a management policy may be required for providing higher reliability compared with user data."

In addition to obtaining background information on this patent application, VerticalNews editors also obtained the inventors' summary information for this patent application: "Some example embodiments of inventive concepts provide a method of programming data into a nonvolatile memory that includes a plurality of memory cells connected with a word line, each memory cell storing first to mth bits of a plurality of bits, the plurality of bits forming first to mth pages, including first to mth page data, the method comprising generating first to mth metadata based on the first to mth page data; rearranging the first to mth metadata to generate first to mth rearranged metadata; and programming the first to mth rearranged metadata and the first to mth page data into the first to mth pages, respectively.

"In some example embodiments, the first to mth rearranged metadata are equal to one another.

"In some example embodiments, the rearranging includes sequentially merging the first to mth metadata to generate merged metadata; and selecting the merged metadata in common as the first to mth rearranged metadata.

"In some example embodiments, the rearranging includes sequentially merging the first to mth metadata to generate merged metadata; reversing the merged metadata to generate reversed metadata; selecting the merged metadata in common as a first group of metadata of the first to mth rearranged metadata; and selecting the reversed metadata in common as a second group of metadata of the first to mth rearranged metadata.

"In some example embodiments, the generating includes generating first to (m-1)th metadata based on first to (m-1)th page data received; programming the first to (m-1)th page data and the first to (m-1)th metadata into a buffer area; receiving the mth page data; generating the mth metadata based on the mth page data; and reading the first to (m-1)th page data and the first to (m-1)th metadata from the buffer area.

"In some example embodiments, the nonvolatile memory includes a single-level cell area configured to store a bit per memory cell, the buffer area being the single-level cell area.

"In some example embodiments, the first to (m-1)th page data and the first to (m-1)th metadata are programmed into memory cells connected with first to (m-1)th word lines of the single-level cell area, respectively.

"In some example embodiments, the first to mth metadata and the first to mth rearranged metadata are generated by a controller configured to control the nonvolatile memory.

"In some example embodiments, in the programming the first to mth rearranged metadata and the first to mth page data into the first to mth pages, the controller transfers the first to mth rearranged metadata and the first to mth page data to the nonvolatile memory.

"In some example embodiments, in the generating first to mth metadata based on first to mth page data received, a controller configured to control the nonvolatile memory generates the first to mth metadata and the controller transfers the first to mth rearranged metadata and the first to mth page data to the nonvolatile memory.

"In some example embodiments, the rearranging is performed by the nonvolatile memory.

"Some example embodiments of inventive concepts are directed to provide a method of reading data from a nonvolatile memory that includes a plurality of memory cells connected with a word line, each memory cell storing first to mth bits of a plurality of bits, the plurality of bits forming first to mth pages, including first to mth page data, the method including reading page data and metadata, corresponding to the page data, from a page selected from the first to mth pages of the nonvolatile memory; and selecting a part of the read metadata as target metadata of the read page data.

"In some example embodiments, the selecting includes selecting a part of the read metadata as target metadata of the read page data based on an address of the read page data.

"In some example embodiments, the method includes performing error correction on the read page data using the target metadata.

"In some example embodiments, the method includes outputting the read page data and target metadata to an external device.

"Some example embodiments of inventive concepts are directed to provide a method of programming data into a nonvolatile memory, the method including generating one or more first metadata corresponding to one or more received page data; rearranging the one or more first metadata to generate one or more rearranged metadata; transferring the one or more rearranged metadata and the one or more received page data into a word line of the nonvolatile memory, the word line storing one or more pages of data in a plurality of memory cells, each memory cell storing one or more bits of the one or more pages of data.

"The rearranging may include sequentially merging the one or more first metadata to generate merged metadata; and selecting the merged metadata in common as the one or more rearranged metadata.

"The rearranging may include sequentially merging the one or more first metadata to generate merged metadata; reversing the merged metadata to generate reversed metadata; selecting the merged metadata in common as a first group of metadata of the one or more rearranged metadata; and selecting the reversed metadata in common as a second group of metadata of the one or more rearranged metadata.

"The generating may include generating first to (m-1)th metadata based on first to (m-1)th page data received; programming the first to (m-1)th page data and the first to (m-1)th metadata into a buffer area; receiving the mth page data; generating the mth metadata based on the mth page data; and reading the first to (m-1)th page data and the first to (m-1)th metadata from the buffer area.

BRIEF DESCRIPTION OF THE FIGURES

"The above and other objects and features will become apparent from the following description with reference to the following figures, wherein like reference numerals refer to like parts throughout the various figures unless otherwise specified, and wherein

"FIG. 1 is a block diagram schematically illustrating a memory system according to an example embodiment of inventive concepts;

"FIG. 2 is a block diagram schematically illustrating a nonvolatile memory according to an example embodiment of inventive concepts;

"FIG. 3 is a flow chart schematically illustrating a program method according to an example embodiment of inventive concepts;

"FIG. 4 is a flow chart schematically illustrating a metadata rearranging method according to an example embodiment of inventive concepts;

"FIG. 5 is a diagram schematically illustrating an example embodiment in which rearranged metadata is generated based on page data;

"FIG. 6 is a diagram schematically illustrating an example where metadata and page data generated according to a conventional manner is programmed;

"FIG. 7 is a diagram schematically illustrating an example embodiment where metadata and page data generated according to an example embodiment of inventive concepts is programmed;

"FIG. 8 is a flow chart schematically illustrating a metadata rearranging method according to another example embodiment of inventive concepts;

"FIG. 9 is a diagram schematically illustrating another example embodiment where rearranged metadata is generated based on page data;

"FIG. 10 is a diagram schematically illustrating another example embodiment where metadata and page data generated according to an example embodiment of inventive concepts is programmed;

"FIG. 11 is a block diagram schematically illustrating a nonvolatile memory according to another example embodiment of inventive concepts;

"FIG. 12 is a flow chart schematically illustrating a program method according to another example embodiment of inventive concepts;

"FIG. 13 is a flow chart schematically illustrating an example embodiment where data is read from a nonvolatile memory;

"FIG. 14 is a block diagram schematically illustrating a memory system according to another example embodiment of inventive concepts;

"FIG. 15 is a flow chart schematically illustrating a program method according to another example embodiment of inventive concepts to program data into a nonvolatile memory;

"FIG. 16 is a flow chart schematically illustrating a read method according to another example embodiment of inventive concepts to read data from a nonvolatile memory;

"FIG. 17 is a block diagram schematically illustrating an application of a memory system according to an example embodiment of inventive concepts;

"FIG. 18 is a block diagram schematically illustrating a memory card according to an example embodiment of inventive concepts;

"FIG. 19 is a block diagram schematically illustrating a solid state drive according to an example embodiment of inventive concepts; and

"FIG. 20 is a block diagram schematically illustrating a computing system according to an example embodiment of inventive concepts."

For more information, see this patent application: CHO, Kyounglae; MOON, Kui-Yon; KANG, Younggyu; KONG, Jaephil. Method of Programming Data into Nonvolatile Memory and Method of Reading Data from Nonvolatile Memory. Filed December 23, 2013 and posted July 10, 2014. Patent URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&u=%2Fnetahtml%2FPTO%2Fsearch-adv.html&r=704&p=15&f=G&l=50&d=PG01&S1=20140703.PD.&OS=PD/20140703&RS=PD/20140703

Keywords for this news article include: Semiconductor, Samsung Electronics Co. Ltd..

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Source: Electronics Newsweekly


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