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Northrop Grumman Initiates Use of Ultra-Low-Noise Amplifiers for Commercial, Military Use

June 9, 2014

Northrop Grumman Corp. has announced it has developed two high performance Monolithic Microwave Integrated Circuit (MMIC) broadband ultra-low-noise amplifiers (LNA) that are in production for immediate delivery.

According to a company release, the indium phosphide (InP) high electron mobility transistor (HEMT) LNAs are for use in E-band and W- band commercial, civil and military applications such as communication links, sensors, millimeter-wave imaging, radars and digital microwave radios.

"The LNAs are the initial release of products designed with the company's indium phosphide process, a powerful semiconductor technology that has successfully been used in Northrop Grumman's advanced military communication systems," said Frank Kropschot, general manager, Microelectronics Products and Services at Northrop Grumman. "For the first time, Northrop is offering products for similarly demanding commercial applications."

To ensure rugged operation, Northrop Grumman added that both LNAs are fully passivated. Both bond pad and backside metallization are Ti/Au, which is compatible with conventional die attach, thermocompression and thermosonic wire bonding assembly techniques.

Northrop Grumman manufactures the LNAs at its microelectronics wafer fabrication facility in Manhattan Beach.

Northrop Grumman is a global security company.

More information and complete details:

www.northropgrumman.com

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Source: Professional Services Close - Up


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